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<p>With the rapid development of integrated circuits (ICs) towards smaller technology nodes, the requirements for silicon wafer surface quality are increasing. Chemical mechanical polishing (CMP) is currently the only precision technology capable of achieving global planarization. The core challenge in CMP technology lies in how to further improve polishing quality while maintaining high polishing efficiency. This study introduces a simple one-step non-metallic cation route to control the anisotropy during the nucleation and growth of silica (SiO<sub>2</sub>), thereby achieving precise control over the particle size and non-sphericity of SiO<sub>2</sub> abrasives. Compared with traditional spherical SiO<sub>2</sub>, the prepared non-spherical SiO<sub>2</sub> exhibits a higher coefficient of friction, indicating stronger mechanical action. By comparing the performance of the prepared non-spherical SiO<sub>2</sub> with commercially available spherical colloidal SiO<sub>2</sub> in CMP, the surface roughness (Ra) of the silicon wafer after polishing with non-spherical SiO<sub>2</sub> polishing slurry is only 1.97&#xa0;nm, significantly lower than the 10.20&#xa0;nm obtained by commercially available spherical colloidal SiO<sub>2</sub>. Meanwhile, the material removal rate (MRR) of the non-spherical SiO<sub>2</sub> polishing slurry reached 1373&#xa0;nm/min, an improvement of approximately 60% compared to the 858&#xa0;nm/min of commercially available spherical SiO<sub>2</sub>. In actual CMP processes, non-spherical SiO<sub>2</sub> particles mainly function through sliding or cutting friction, compared to the rolling friction of spherical particles, and their mechanical effect is stronger, which helps to remove protrusions on the silicon wafer surface more efficiently. This results in higher material removal rates and lower surface roughness under the same process conditions, ultimately leading to superior surface flatness and overall quality. This research provides new inspiration for developing high-performance abrasives for advanced CMP technology.</p>

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Effect of Shapes of Silica Abrasives on the Performance of Chemical Mechanical Polishing for Silicon Wafers

  • 期刊论文

  • 发表日期：

    2026年1月22日

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  • Yiting Li,
  • Zuozuo Wu,
  • Daming Wang,
  • Yangjian Li,
  • Jianwei Cao,
  • Shuai Yuan,
  • Deren Yang

摘要

With the rapid development of integrated circuits (ICs) towards smaller technology nodes, the requirements for silicon wafer surface quality are increasing. Chemical mechanical polishing (CMP) is currently the only precision technology capable of achieving global planarization. The core challenge in CMP technology lies in how to further improve polishing quality while maintaining high polishing efficiency. This study introduces a simple one-step non-metallic cation route to control the anisotropy during the nucleation and growth of silica (SiO2), thereby achieving precise control over the particle size and non-sphericity of SiO2 abrasives. Compared with traditional spherical SiO2, the prepared non-spherical SiO2 exhibits a higher coefficient of friction, indicating stronger mechanical action. By comparing the performance of the prepared non-spherical SiO2 with commercially available spherical colloidal SiO2 in CMP, the surface roughness (Ra) of the silicon wafer after polishing with non-spherical SiO2 polishing slurry is only 1.97 nm, significantly lower than the 10.20 nm obtained by commercially available spherical colloidal SiO2. Meanwhile, the material removal rate (MRR) of the non-spherical SiO2 polishing slurry reached 1373 nm/min, an improvement of approximately 60% compared to the 858 nm/min of commercially available spherical SiO2. In actual CMP processes, non-spherical SiO2 particles mainly function through sliding or cutting friction, compared to the rolling friction of spherical particles, and their mechanical effect is stronger, which helps to remove protrusions on the silicon wafer surface more efficiently. This results in higher material removal rates and lower surface roughness under the same process conditions, ultimately leading to superior surface flatness and overall quality. This research provides new inspiration for developing high-performance abrasives for advanced CMP technology.