<p>This study investigates the band alignment, charge carrier dynamics, and performance optimization of an <i>n</i>-ZnO/MAPbI<sub>3</sub>/<i>p</i>-NiO perovskite solar cell. The band alignment diagram reveals efficient charge separation and transport, with <i>n</i>-ZnO (electron transport layer) extracting electrons and <i>p</i>-NiO (hole transport layer) extracting holes, which minimizes recombination loss. Simulation study of carrier generation and recombination confirms higher photocarrier generation (~10<sup>21</sup>) and lower recombination (~10<sup>15</sup>) in the MAPbI<sub>3</sub> perovskite absorbing layer, leading to efficient photocurrent extraction (~18&#xa0;mA/cm<sup>2</sup>). The device achieves a short-circuit current density (<i>J</i><sub>sc</sub>) of ~18.63&#xa0;mA/cm<sup>2</sup>, open-circuit voltage (<i>V</i><sub>oc</sub>) of ~1.1&#xa0;V, fill factor (FF) of 83%, and power conversion efficiency (PCE) of ~17.23%. The key factors responsible for the performance of the device are also investigated. Optimization of the active-layer thickness improves efficiency up to ~23.6% at 1.2&#xa0;µm due to enhanced light absorption. Series resistance and temperature variations significantly affect FF and PCE, with higher resistance and elevated temperatures reducing efficiency. Wavelength-dependent studies show that shorter wavelengths yield stronger absorption, higher photocurrent, and improved performance, while longer wavelengths reduce efficiency. The results demonstrate that careful control of band alignment, active-layer thickness, resistance, and stability is crucial for achieving high-performance and low-cost perovskite solar cells capable of harnessing solar energy with enhanced efficiency while supporting environmental sustainability.</p>

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Study on Factors Responsible for Performance of n-ZnO/MAPbI3/p-NiO Perovskite Solar Cell

  • P. A. Alvi

摘要

This study investigates the band alignment, charge carrier dynamics, and performance optimization of an n-ZnO/MAPbI3/p-NiO perovskite solar cell. The band alignment diagram reveals efficient charge separation and transport, with n-ZnO (electron transport layer) extracting electrons and p-NiO (hole transport layer) extracting holes, which minimizes recombination loss. Simulation study of carrier generation and recombination confirms higher photocarrier generation (~1021) and lower recombination (~1015) in the MAPbI3 perovskite absorbing layer, leading to efficient photocurrent extraction (~18 mA/cm2). The device achieves a short-circuit current density (Jsc) of ~18.63 mA/cm2, open-circuit voltage (Voc) of ~1.1 V, fill factor (FF) of 83%, and power conversion efficiency (PCE) of ~17.23%. The key factors responsible for the performance of the device are also investigated. Optimization of the active-layer thickness improves efficiency up to ~23.6% at 1.2 µm due to enhanced light absorption. Series resistance and temperature variations significantly affect FF and PCE, with higher resistance and elevated temperatures reducing efficiency. Wavelength-dependent studies show that shorter wavelengths yield stronger absorption, higher photocurrent, and improved performance, while longer wavelengths reduce efficiency. The results demonstrate that careful control of band alignment, active-layer thickness, resistance, and stability is crucial for achieving high-performance and low-cost perovskite solar cells capable of harnessing solar energy with enhanced efficiency while supporting environmental sustainability.