Study on Factors Responsible for Performance of n-ZnO/MAPbI3/p-NiO Perovskite Solar Cell
摘要
This study investigates the band alignment, charge carrier dynamics, and performance optimization of an n-ZnO/MAPbI3/p-NiO perovskite solar cell. The band alignment diagram reveals efficient charge separation and transport, with n-ZnO (electron transport layer) extracting electrons and p-NiO (hole transport layer) extracting holes, which minimizes recombination loss. Simulation study of carrier generation and recombination confirms higher photocarrier generation (~1021) and lower recombination (~1015) in the MAPbI3 perovskite absorbing layer, leading to efficient photocurrent extraction (~18 mA/cm2). The device achieves a short-circuit current density (Jsc) of ~18.63 mA/cm2, open-circuit voltage (Voc) of ~1.1 V, fill factor (FF) of 83%, and power conversion efficiency (PCE) of ~17.23%. The key factors responsible for the performance of the device are also investigated. Optimization of the active-layer thickness improves efficiency up to ~23.6% at 1.2 µm due to enhanced light absorption. Series resistance and temperature variations significantly affect FF and PCE, with higher resistance and elevated temperatures reducing efficiency. Wavelength-dependent studies show that shorter wavelengths yield stronger absorption, higher photocurrent, and improved performance, while longer wavelengths reduce efficiency. The results demonstrate that careful control of band alignment, active-layer thickness, resistance, and stability is crucial for achieving high-performance and low-cost perovskite solar cells capable of harnessing solar energy with enhanced efficiency while supporting environmental sustainability.