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<p>Tb-activated phosphors are crucial for achieving narrow-band green emission in modern optoelectronic devices, but their thermal and chemical instability under high power restricts practical application. In this study, we prepared a Sr<sub>0.97</sub>Ba<sub>0.02</sub>Ga<sub>2</sub>O<sub>4</sub>:0.01Tb<sup>3+</sup> phosphor featuring low thermal quenching, which retains 80% of its initial luminous intensity even at 210°C. Partial substitution of Sr<sup>2+</sup> with Ba<sup>2+</sup> introduces more polar and rigid bonds, significantly enhancing thermal stability; first-principles elastic modulus calculations corroborate this structural stiffening effect. The sample’s structure, morphology, and optical properties were characterized: x-ray diffraction (XRD) and Fourier transform infrared (FT-IR) spectroscopy confirm a highly pure phase with space group P21/c and a Ga-O stretching vibration at 679&#xa0;cm<sup>−1</sup>. Under 378-nm excitation, the green emission intensity at 543&#xa0;nm is nearly tripled compared to Sr<sub>0.99</sub>Ga<sub>2</sub>O<sub>4</sub>:0.01Tb<sup>3+</sup>, with CIE color coordinates of (0.2731, 0.4789). These results demonstrate the promising application potential of this phosphor for solid-state lighting and provide theoretical support for the site substitution mechanism. The material was synthesized using a high-temperature solid-state method and is compatible with near-ultraviolet (UV) chips, making it suitable for high-power light-emitting diodes/micro-light-emitting diodes (LEDs/µLEDs), display backlighting, and automotive lighting applications.</p>

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Lattice Rigidity Engineering via Ba Substitution for Near-Zero Thermal Quenching in Tb3+:SrGa2O4 Phosphors

  • 期刊论文

  • 发表日期：

    2026年1月14日

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  • Yu Li,
  • Hui Li

摘要

Tb-activated phosphors are crucial for achieving narrow-band green emission in modern optoelectronic devices, but their thermal and chemical instability under high power restricts practical application. In this study, we prepared a Sr0.97Ba0.02Ga2O4:0.01Tb3+ phosphor featuring low thermal quenching, which retains 80% of its initial luminous intensity even at 210°C. Partial substitution of Sr2+ with Ba2+ introduces more polar and rigid bonds, significantly enhancing thermal stability; first-principles elastic modulus calculations corroborate this structural stiffening effect. The sample’s structure, morphology, and optical properties were characterized: x-ray diffraction (XRD) and Fourier transform infrared (FT-IR) spectroscopy confirm a highly pure phase with space group P21/c and a Ga-O stretching vibration at 679 cm−1. Under 378-nm excitation, the green emission intensity at 543 nm is nearly tripled compared to Sr0.99Ga2O4:0.01Tb3+, with CIE color coordinates of (0.2731, 0.4789). These results demonstrate the promising application potential of this phosphor for solid-state lighting and provide theoretical support for the site substitution mechanism. The material was synthesized using a high-temperature solid-state method and is compatible with near-ultraviolet (UV) chips, making it suitable for high-power light-emitting diodes/micro-light-emitting diodes (LEDs/µLEDs), display backlighting, and automotive lighting applications.