Scholarlink

<p>We present a novel epitaxial structure that incorporates a composite of a graded AlGaN layer and C-doped GaN layer, which is grown on a silicon (Si) substrate employing metal–organic chemical vapor deposition (MOCVD). This combination effectively inhibits the memory effect of the iron (Fe) atom and decreases the Fe concentration in the channel layer. Consequently, the stress in GaN films is alleviated and the mobility of the two-dimensional electron gas (2DEG) is enhanced. High-electron-mobility transistors (HEMTs) fabricated based on the proposed epitaxial structure exhibit improved saturation current and transconductance. The breakdown voltage is 160&#xa0;V, representing a 47% improvement in comparison to the device constructed based on a conventional Fe-doped epitaxial structure. Additionally, the device has a unit current gain cutoff frequency (<i>f</i><sub>T</sub>) of 49.4&#xa0;GHz and maximum oscillation frequency (<i>f</i><sub>max</sub>) of 67.3&#xa0;GHz. The results show that the epi-structure with the graded AlGaN layer and C-doped GaN layer has great potential for high-frequency and high-power applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Enhancing Breakdown Performance of GaN HEMTs by Graded AlGaN Layer and C-doped Buffer

  • 期刊论文

  • 发表日期：

    2025年11月29日

查看全文
  • Xiaoyi Liu,
  • Kai Wang,
  • Xiao Ma,
  • Jun Tang,
  • Hong Wang

摘要

We present a novel epitaxial structure that incorporates a composite of a graded AlGaN layer and C-doped GaN layer, which is grown on a silicon (Si) substrate employing metal–organic chemical vapor deposition (MOCVD). This combination effectively inhibits the memory effect of the iron (Fe) atom and decreases the Fe concentration in the channel layer. Consequently, the stress in GaN films is alleviated and the mobility of the two-dimensional electron gas (2DEG) is enhanced. High-electron-mobility transistors (HEMTs) fabricated based on the proposed epitaxial structure exhibit improved saturation current and transconductance. The breakdown voltage is 160 V, representing a 47% improvement in comparison to the device constructed based on a conventional Fe-doped epitaxial structure. Additionally, the device has a unit current gain cutoff frequency (fT) of 49.4 GHz and maximum oscillation frequency (fmax) of 67.3 GHz. The results show that the epi-structure with the graded AlGaN layer and C-doped GaN layer has great potential for high-frequency and high-power applications.