Optimizing Sc-Doped AlN FBARs for Wideband Performance in Sub-3 GHz RF Filters
摘要
Replacing the AlN piezoelectric material in thin-film bulk acoustic resonators (FBAR) with scandium-doped AlN can enhance the electromechanical coupling, allowing for a wider bandwidth filter. Based on our theory, we estimate that the frequency bandwidth (the difference between the antiresonant and resonant frequencies) and the electromechanical coupling coefficient increase with higher scandium concentrations. Our model also evaluates optimized designs by considering the ratio of the average thickness of the metallic layers to the thickness of the piezoelectric layer. This optimized ratio is subsequently applied to bulk acoustic wave (BAW) filter components with varying bandwidths. Ultimately, the measured results of our fabricated filters validate the model’s optimal predictions. To further verify the design, three band filters—B40, Wi-Fi, and B41—were fabricated using optimized values of the metal-to-piezoelectric thickness ratio (Rd) and Sc concentrations. Experimental results show that the adjustment of Rd based on theoretical predictions effectively reduced band-edge insertion losses and improved filter performance across all bands. For the B40 filter, with a bandwidth (BW) ratio of 4.26%, increasing