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<p>In this work, n-Cd<sub><i>m</i></sub>Zn<sub>1−<i>m</i></sub>S thin films were deposited on p-Si substrates and their electrophysical and optical characteristics were systematically investigated. Atomic layer deposition (ALD) enabled the formation of nanostructured CdS layers with grain-like morphology, as confirmed by atomic force microscopy (AFM) analysis over a 20 × 20 μm<sup>2</sup> area, where the surface roughness reached ~ 179.5 nm. Optical absorption measurements revealed a sharp edge near 500 nm, corresponding to a bandgap of ~ 2.42 eV, consistent with bulk CdS. Strong absorption was observed in the near-UV and blue regions, while transparency dominated above 600 nm, confirming their suitability as window or buffer layers in optoelectronic devices. Numerical modeling of the pSi/n-Cd<sub><i>m</i></sub>Zn<sub>1−<i>m</i></sub>S heterojunction showed strong temperature and composition dependence of both space charge and electric field distributions. The incorporation of incomplete ionization effects was found to significantly broaden the depletion region, reduce the peak electric field by a factor of ~ 3.5, and induce pronounced asymmetries in charge redistribution at low temperatures. Compositional analysis demonstrated that the bandgap can be tuned between ~ 2.6 eV (Cd-rich) and &gt; 3.8 eV (Zn-rich), while thermal effects further modulate <i>E</i><sub>g</sub> according to Varshni and phonon interaction models. These combined experimental and simulation results highlight the critical role of nanostructure, alloy composition, and incomplete ionization in defining the performance of pSi/n-Cd<sub><i>m</i></sub>Zn<sub>1−<i>m</i></sub>S heterostructures, making them promising candidates for next-generation solar cells, UV–visible photodetectors, and low-temperature optoelectronic devices.</p>

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Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

  • 期刊论文

  • 发表日期：

    2025年10月23日

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  • Jo’shqin Sh. Abdullayev,
  • Ibrokhim B. Sapaev,
  • Sardor R. Kadirov,
  • Jonibek Sh. Abdullayev

摘要

In this work, n-CdmZn1−mS thin films were deposited on p-Si substrates and their electrophysical and optical characteristics were systematically investigated. Atomic layer deposition (ALD) enabled the formation of nanostructured CdS layers with grain-like morphology, as confirmed by atomic force microscopy (AFM) analysis over a 20 × 20 μm2 area, where the surface roughness reached ~ 179.5 nm. Optical absorption measurements revealed a sharp edge near 500 nm, corresponding to a bandgap of ~ 2.42 eV, consistent with bulk CdS. Strong absorption was observed in the near-UV and blue regions, while transparency dominated above 600 nm, confirming their suitability as window or buffer layers in optoelectronic devices. Numerical modeling of the pSi/n-CdmZn1−mS heterojunction showed strong temperature and composition dependence of both space charge and electric field distributions. The incorporation of incomplete ionization effects was found to significantly broaden the depletion region, reduce the peak electric field by a factor of ~ 3.5, and induce pronounced asymmetries in charge redistribution at low temperatures. Compositional analysis demonstrated that the bandgap can be tuned between ~ 2.6 eV (Cd-rich) and > 3.8 eV (Zn-rich), while thermal effects further modulate Eg according to Varshni and phonon interaction models. These combined experimental and simulation results highlight the critical role of nanostructure, alloy composition, and incomplete ionization in defining the performance of pSi/n-CdmZn1−mS heterostructures, making them promising candidates for next-generation solar cells, UV–visible photodetectors, and low-temperature optoelectronic devices.