Copper Grid Lines Electrodepositing Assisted with High-Resolution Lithography
摘要
In the advancement of silicon-based solar cell technology, precision engineering of electrode structures through semiconductor fabrication optimization plays a pivotal role in enhancing electrical performance. In this study, an electrodeposition technique was employed to sequentially deposit a Ni seed layer followed by Cu films on indium tin oxide (ITO) electrodes. The influence of Ni seed layer on grain size and electrical properties of Cu films was investigated. The experimental results indicated that optimizing the deposition charge density of the Ni seed layer effectively improved the crystalline quality of the Cu films. Furthermore, high resolution photolithography enabled the successful fabrication of Cu gate line electrodes with a line width of 10 μm and an aspect ratio of 0.4. This work not only optimized the electroplating process but also provided a promising approach for the fabrication of efficient and cost-effective silicon-based solar cell electrodes.