<p>In this study, Co<sub>3</sub>O<sub>4</sub> nanoparticles were synthesized using the sol–gel combustion method, incorporating SiO<sub>2</sub> at 25%, 50%, and 75% ratios to modify their properties. X-ray diffraction (XRD) confirmed a single-phase cubic spinel structure for pure Co<sub>3</sub>O<sub>4</sub> and SiO<sub>2</sub>-incorporated nanocomposites, causing a shift in diffraction peaks and indicating structural changes. Rietveld refinement (GSAS-II [General Structure Analysis System II]) showed excellent agreement with theoretical data, with minimal residuals (1.35–1.90%) and good goodness-of-fit (GOF) values. Lattice parameters decreased slightly from 8.096 Å (pure Co<sub>3</sub>O<sub>4</sub>) to 8.080 Å (50% SiO<sub>2</sub>), while crystallite size increased from 30.58 nm to 33.95 nm. Field-emission scanning electron microscopy (FE-SEM) revealed particle aggregation, increasing in size from 69.46 nm (pure Co<sub>3</sub>O<sub>4</sub>) to 75.22 nm in SiO<sub>2</sub>-incorporated samples, affecting surface morphology and agglomeration. Fourier transform infrared spectroscopy (FT-IR) analysis validated the spinel structure, with characteristic Co-O stretching bands at 544–556 cm<sup>−1</sup> and 667–668 cm<sup>−1</sup>. Magnetic properties showed peak saturation magnetization (1.09 emu/g) and remanent magnetization (0.049 emu/g) at 25% SiO<sub>2</sub>, indicating enhanced ferromagnetic interactions. However, at 75% SiO<sub>2</sub>, these values dropped to 0.56 emu/g and 0.021 emu/g. Coercivity peaked at 103.38 Oe at 25% SiO<sub>2</sub> but decreased with higher SiO<sub>2</sub> content. The anisotropy constant and squareness ratio both showed maximum values at 25% SiO<sub>2</sub>, followed by declines at higher substitution levels. These results suggest that moderate SiO<sub>2</sub> incorporation improves magnetic properties while excessive incorporation weakens them, making the materials suitable for high-frequency electronic and biomedical applications.</p> Graphical Abstract <p></p>

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Tailoring Co3O4 Nanoparticles with SiO2 for Enhanced Structural, Morphological, and Magnetic Properties

  • Mahmood H. Majeed,
  • Ali M. Mohammad,
  • Salar K. Fatah,
  • Hanaa Sh. Ahmed,
  • Balen H. Ahmed,
  • Hero S. Ahmed,
  • Salah R. Saeed,
  • Ahmed R. Tarkhany,
  • Tahseen H. Mubarak,
  • Zaid T. Khodair,
  • Mohammed B. Jumaa,
  • A. K. Sijo

摘要

In this study, Co3O4 nanoparticles were synthesized using the sol–gel combustion method, incorporating SiO2 at 25%, 50%, and 75% ratios to modify their properties. X-ray diffraction (XRD) confirmed a single-phase cubic spinel structure for pure Co3O4 and SiO2-incorporated nanocomposites, causing a shift in diffraction peaks and indicating structural changes. Rietveld refinement (GSAS-II [General Structure Analysis System II]) showed excellent agreement with theoretical data, with minimal residuals (1.35–1.90%) and good goodness-of-fit (GOF) values. Lattice parameters decreased slightly from 8.096 Å (pure Co3O4) to 8.080 Å (50% SiO2), while crystallite size increased from 30.58 nm to 33.95 nm. Field-emission scanning electron microscopy (FE-SEM) revealed particle aggregation, increasing in size from 69.46 nm (pure Co3O4) to 75.22 nm in SiO2-incorporated samples, affecting surface morphology and agglomeration. Fourier transform infrared spectroscopy (FT-IR) analysis validated the spinel structure, with characteristic Co-O stretching bands at 544–556 cm−1 and 667–668 cm−1. Magnetic properties showed peak saturation magnetization (1.09 emu/g) and remanent magnetization (0.049 emu/g) at 25% SiO2, indicating enhanced ferromagnetic interactions. However, at 75% SiO2, these values dropped to 0.56 emu/g and 0.021 emu/g. Coercivity peaked at 103.38 Oe at 25% SiO2 but decreased with higher SiO2 content. The anisotropy constant and squareness ratio both showed maximum values at 25% SiO2, followed by declines at higher substitution levels. These results suggest that moderate SiO2 incorporation improves magnetic properties while excessive incorporation weakens them, making the materials suitable for high-frequency electronic and biomedical applications.

Graphical Abstract