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<p>This research article proposes a novel strategy to explore the nucleation and growth mechanism of a filamentary spike-like feature (secondary growth) on vapor-deposited antimony selenide (Sb<sub>2</sub>S<sub>3</sub>) whiskers (primary crystallization) due to the influence of electric fields, defects, and ambient atmosphere. Small, ultra-long, branched whiskers were produced by the physical vapor deposition (PVD) method utilizing a homemade tubular furnace. In order to grow these crystal features, a temperature difference (Δ<i>T</i>) of 180°C was maintained by adjusting the temperature in the hot (710°C) and cold zones (530°C), followed by a fast cooling rate of 12°C/min. Optical and scanning electron microscopy, three-dimensional (3D) profilometry, and Raman imaging analysis were utilized to investigate the surface features of the as-grown and electrically activated whiskers under ambient atmosphere. A possible crystallization (secondary growth) mechanism of the filamentary crystals in the defective region under the influence of an electric field was proposed. We noted that the effect of extrinsic impurities like oxygen coupled with an electric field promoted the growth of filamentary crystals on the whiskers, which were probed utilizing x-ray diffraction (XRD), energy-dispersive x-ray analysis (EDAX), x-ray photoelectron spectroscopy (XPS), Raman analysis, thermogravimetric analysis (TGA), and differential thermal analysis (DTA). An orthorhombic crystal structure with unit dimensions of <i>a</i> = 11.632&#xa0;Å, <i>b</i> = 11.798&#xa0;Å, and <i>c</i> = 3.987&#xa0;Å was calculated from the XRD results. This research provides a new growth mechanism and a comprehensive picture of nucleation followed by branching of filamentary crystals on the primary crystallized Sb<sub>2</sub>Se<sub>3</sub> whisker surface. The research output with regard to layered chalcogenide materials (LCMs) will undoubtedly help researchers focus on removing secondary/whisker growth from LCM-based optoelectronic devices.</p>

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Unusual Generation of Filament-Like Crystal on Vapor-Deposited Sb2Se3 Whiskers Under Ambient Atmosphere

  • 期刊论文

  • 发表日期：

    2025年10月9日

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  • Bibin John,
  • Muthu Senthil Pandian,
  • P. Ramasamy,
  • Sabu Thomas,
  • A. G. Kunjomana,
  • M. G. Hariprasad,
  • Lexu Jose,
  • Teena Mathew

摘要

This research article proposes a novel strategy to explore the nucleation and growth mechanism of a filamentary spike-like feature (secondary growth) on vapor-deposited antimony selenide (Sb2S3) whiskers (primary crystallization) due to the influence of electric fields, defects, and ambient atmosphere. Small, ultra-long, branched whiskers were produced by the physical vapor deposition (PVD) method utilizing a homemade tubular furnace. In order to grow these crystal features, a temperature difference (ΔT) of 180°C was maintained by adjusting the temperature in the hot (710°C) and cold zones (530°C), followed by a fast cooling rate of 12°C/min. Optical and scanning electron microscopy, three-dimensional (3D) profilometry, and Raman imaging analysis were utilized to investigate the surface features of the as-grown and electrically activated whiskers under ambient atmosphere. A possible crystallization (secondary growth) mechanism of the filamentary crystals in the defective region under the influence of an electric field was proposed. We noted that the effect of extrinsic impurities like oxygen coupled with an electric field promoted the growth of filamentary crystals on the whiskers, which were probed utilizing x-ray diffraction (XRD), energy-dispersive x-ray analysis (EDAX), x-ray photoelectron spectroscopy (XPS), Raman analysis, thermogravimetric analysis (TGA), and differential thermal analysis (DTA). An orthorhombic crystal structure with unit dimensions of a = 11.632 Å, b = 11.798 Å, and c = 3.987 Å was calculated from the XRD results. This research provides a new growth mechanism and a comprehensive picture of nucleation followed by branching of filamentary crystals on the primary crystallized Sb2Se3 whisker surface. The research output with regard to layered chalcogenide materials (LCMs) will undoubtedly help researchers focus on removing secondary/whisker growth from LCM-based optoelectronic devices.