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<p>In this study, the performance of CdTe-based solar cells is investigated using numerical simulations to explore the impact of window layer inversion on device efficiency. Conventional CdTe solar cells typically employ an n-type window layer, but in this work, a p-type ZnTe window layer is introduced to form an inverted device architecture. An experimental setup was also made to validate the numerical data and to practically explore the possibility of such device architecture. The photovoltaic parameters of both conventional (n-ZnTe/n-CdTe/i-CdTe/p-CdTe/p-ZnTe) and inverted (p-ZnTe/p-CdTe/i-CdTe/n-CdTe/n-ZnTe) structures are evaluated using the one-dimensional solar cell capacitance simulator (SCAPS-1D). The results demonstrate that the inverted architecture can enhance power conversion efficiency by up to 45% through optimized structural parameters. The simulated optimal device configuration of TCO/p-ZnTe/p-CdTe/n-CdTe/n-ZnTe/In shows a potential efficiency exceeding 23%, surpassing the current efficiency records for CdTe solar cells. This study presents a numerical investigation of key physical mechanisms, such as the impurity photovoltaic effect (IPV) and impact ionization (II), whose influence on performance is inferred indirectly through carrier dynamics and quantum efficiency trends, given that SCAPS-1D does not explicitly model these effects. Furthermore, these findings highlight the potential of the inverted ZnTe/CdTe device for advanced optoelectronic applications, including bifacial photovoltaics and photoelectrochemical (PEC) hydrogen production.</p>

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Numerical Investigation of Mirror-Configured ZnTe/CdTe Solar Cells: The Impact of p-Type Window Layers on Performance Enhancement

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月17日

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  • Tahereh Zargar,
  • Ashfaque E Alam,
  • Tayebeh Mousavi

摘要

In this study, the performance of CdTe-based solar cells is investigated using numerical simulations to explore the impact of window layer inversion on device efficiency. Conventional CdTe solar cells typically employ an n-type window layer, but in this work, a p-type ZnTe window layer is introduced to form an inverted device architecture. An experimental setup was also made to validate the numerical data and to practically explore the possibility of such device architecture. The photovoltaic parameters of both conventional (n-ZnTe/n-CdTe/i-CdTe/p-CdTe/p-ZnTe) and inverted (p-ZnTe/p-CdTe/i-CdTe/n-CdTe/n-ZnTe) structures are evaluated using the one-dimensional solar cell capacitance simulator (SCAPS-1D). The results demonstrate that the inverted architecture can enhance power conversion efficiency by up to 45% through optimized structural parameters. The simulated optimal device configuration of TCO/p-ZnTe/p-CdTe/n-CdTe/n-ZnTe/In shows a potential efficiency exceeding 23%, surpassing the current efficiency records for CdTe solar cells. This study presents a numerical investigation of key physical mechanisms, such as the impurity photovoltaic effect (IPV) and impact ionization (II), whose influence on performance is inferred indirectly through carrier dynamics and quantum efficiency trends, given that SCAPS-1D does not explicitly model these effects. Furthermore, these findings highlight the potential of the inverted ZnTe/CdTe device for advanced optoelectronic applications, including bifacial photovoltaics and photoelectrochemical (PEC) hydrogen production.