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<p>A thorough design space investigation of double-gate (DG) MoS<sub>2</sub> tunnel field-effect transistors (TFETs) is presented in this paper, with an emphasis on how important analog, radio frequency (RF), linearity, and harmonic distortion metrics are affected by the thickness of the MoS<sub>2</sub> channel, which includes monolayer to few-layer designs. We examine how changes in the number of MoS<sub>2</sub> layers impact the device’s electrostatic control, bandgap, and effective mass, and subsequently adjust its performance across various analog and RF figures of merit, using simulation models based on physics. The findings show that, in addition to advantageous small-signal properties like balanced cut-off frequency (<i>f</i><sub>T</sub>), gain–bandwidth product (GBW), and decreased parasitic capacitance (<i>C</i><sub>GS</sub>, <i>C</i><sub>GD</sub>), thinner channels (monolayer and bilayer MoS<sub>2</sub>) offer balanced transconductance, superior output resistance (<i>R</i><sub>out</sub>), and intrinsic gain (<i>A</i><sub>V</sub>). Additionally, linearity measurements, such as intercept points (VIP<sub>2</sub>, VIP<sub>3</sub>, IIP<sub>3</sub>), third-order intermodulation distortion (IMD<sub>3</sub>), 1-dB compression point, and second- and third-order transconductance (<i>g</i><sub>m2</sub>, g<sub>m3</sub>), demonstrate the notable reduction in performance with increasing channel thickness. Monolayer MoS<sub>2</sub> TFETs have the lowest total harmonic distortion (THD), according to harmonic distortion analysis, which makes them ideal for low-power, high-linearity applications.</p>

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Investigation of Double-Gate MoS2 TFETs in Design Space: Impact of Channel Thickness on Analog, RF, Linearity, and Harmonic Distortion

  • 期刊论文

  • 发表日期：

    2025年9月7日

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  • Suman Das,
  • Om Prakash,
  • Saumya Das,
  • Biswajit Mahanty

摘要

A thorough design space investigation of double-gate (DG) MoS2 tunnel field-effect transistors (TFETs) is presented in this paper, with an emphasis on how important analog, radio frequency (RF), linearity, and harmonic distortion metrics are affected by the thickness of the MoS2 channel, which includes monolayer to few-layer designs. We examine how changes in the number of MoS2 layers impact the device’s electrostatic control, bandgap, and effective mass, and subsequently adjust its performance across various analog and RF figures of merit, using simulation models based on physics. The findings show that, in addition to advantageous small-signal properties like balanced cut-off frequency (fT), gain–bandwidth product (GBW), and decreased parasitic capacitance (CGS, CGD), thinner channels (monolayer and bilayer MoS2) offer balanced transconductance, superior output resistance (Rout), and intrinsic gain (AV). Additionally, linearity measurements, such as intercept points (VIP2, VIP3, IIP3), third-order intermodulation distortion (IMD3), 1-dB compression point, and second- and third-order transconductance (gm2, gm3), demonstrate the notable reduction in performance with increasing channel thickness. Monolayer MoS2 TFETs have the lowest total harmonic distortion (THD), according to harmonic distortion analysis, which makes them ideal for low-power, high-linearity applications.