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<p>Heterojunction WS<sub>2</sub>/p-Si thin film was synthesized using the chemical bath deposition (CBD) method. X-ray diffraction patterns show that the WS<sub>2</sub> thin film has high crystallinity with a hexagonal phase and crystallite size of ~221&#xa0;nm. Field-emission scanning electron microscopy (FESEM) shows a petal-like morphology. The optical characteristics of the deposited WS<sub>2</sub> thin film were examined using ultraviolet–visible (UV–Vis) spectroscopy and photoluminescence (PL) spectroscopy, revealing an optical bandgap of approximately 2.33&#xa0;eV in the visible spectrum. The PL emission spectrum shows multiple emission peaks between 400&#xa0;nm and 675&#xa0;nm. Current–voltage (<i>I–V</i>) characteristics were measured in the dark and at different light wavelengths, with the estimated ideality factor ranging from ~1.52 to ~1.67, which is very close to the ideal value for a diode. Current–time (<i>I–t</i>) measurement of the WS<sub>2</sub> thin film shows response and recovery time of ~0.01&#xa0;s. The measurement at 5&#xa0;V and forward biasing shows the lowest recovery and response time, which make it highly effective for detecting light in a broad range from the near-infrared to UV region.</p> Graphical abstract

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Light Sensing Properties of WS2/p-Si Heterojunction Petal-Like Morphology Thin Film Synthesized Using CBD

  • 期刊论文

  • 发表日期：

    2025年9月15日

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  • Avneesh Kumar,
  • Ajeet Gupta,
  • Surbhi,
  • Himanshu Sharma,
  • Munish Kumar Yadav,
  • Anjali Verma,
  • Mudit P. Srivastava,
  • Devendra Kumar Rana

摘要

Heterojunction WS2/p-Si thin film was synthesized using the chemical bath deposition (CBD) method. X-ray diffraction patterns show that the WS2 thin film has high crystallinity with a hexagonal phase and crystallite size of ~221 nm. Field-emission scanning electron microscopy (FESEM) shows a petal-like morphology. The optical characteristics of the deposited WS2 thin film were examined using ultraviolet–visible (UV–Vis) spectroscopy and photoluminescence (PL) spectroscopy, revealing an optical bandgap of approximately 2.33 eV in the visible spectrum. The PL emission spectrum shows multiple emission peaks between 400 nm and 675 nm. Current–voltage (I–V) characteristics were measured in the dark and at different light wavelengths, with the estimated ideality factor ranging from ~1.52 to ~1.67, which is very close to the ideal value for a diode. Current–time (I–t) measurement of the WS2 thin film shows response and recovery time of ~0.01 s. The measurement at 5 V and forward biasing shows the lowest recovery and response time, which make it highly effective for detecting light in a broad range from the near-infrared to UV region.

Graphical abstract