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<p>The use of transparent conducting oxides in optoelectronic devices has attracted much attention at the industrial and commercial levels. In this context, this study investigates the effect of substitutional doping of Ga and V on the structural, morphological, optical, and current–voltage characteristics in the temperature range from 290 to 30&#xa0;K and with the range of voltage varied from 2 to 120&#xa0;V of prepared thin films. The XRD, FE-SEM, AFM, UV-visible, and PL techniques, and two-probe resistivity measurement methods have been used to explore the structural, optical, and low-temperature-dependent current–voltage characteristics of prepared samples. The XRD study confirms that the pure and doped ZnO thin-film samples with their crystalline nature have a wurtzite structure, without any impurity peaks of Ga and V in the ZnO structure. The crystallite size is observed to be 25.36&#xa0;nm in ZnO, which decreased up to 9.38&#xa0;nm as the Ga concentration was increased from 3 to 9% in the Zn<sub>0.97</sub>V<sub>0.03</sub>O sample. Further, the energy bandgap value of prepared samples has been observed to depict a blueshift for doped thin films up to 3.24&#xa0;eV, compared with up to 3.07&#xa0;eV in the case of the pure ZnO sample. Further, the temperature-dependent current–voltage study has shown that pure and Zn<sub>0.97</sub>Ga<sub>0.03</sub>O thin films conduct up to 50&#xa0;K and 30&#xa0;K, respectively, compared to Zn<sub>0.97</sub>V<sub>0.03</sub>O, Zn<sub>0.94</sub>V<sub>0.03</sub>Ga<sub>0.03</sub>O, Zn<sub>0.91</sub>V<sub>0.03</sub>Ga<sub>0.06</sub>O, and Zn<sub>0.88</sub>V<sub>0.03</sub>Ga<sub>0.09</sub>O thin films which do not conduct below 150&#xa0;K, 170&#xa0;K, 130&#xa0;K and 130&#xa0;K, respectively, indicating their high resistive nature. Therefore, it is concluded that&#xa0;Ga doping has made ZnO thin films a&#xa0;good transparent and conductive material for optoelectronic devices due to the high optical transparency of about&#xa0;89%, a lower value of the activation energy of 0.02&#xa0;eV, and the ability to facilitate the conduction process to 30&#xa0;K.</p> Graphical Abstract <p></p>

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Synthesis of Doped-ZnO Thin Films and Study of Optical and Low-Temperature-Dependent Electrical Properties for Applications as Transparent and Conducting Oxide Nanomaterial

  • 期刊论文

  • 发表日期：

    2025年8月23日

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  • Seema Azad,
  • Adesh Kumar,
  • Subhash Chand

摘要

The use of transparent conducting oxides in optoelectronic devices has attracted much attention at the industrial and commercial levels. In this context, this study investigates the effect of substitutional doping of Ga and V on the structural, morphological, optical, and current–voltage characteristics in the temperature range from 290 to 30 K and with the range of voltage varied from 2 to 120 V of prepared thin films. The XRD, FE-SEM, AFM, UV-visible, and PL techniques, and two-probe resistivity measurement methods have been used to explore the structural, optical, and low-temperature-dependent current–voltage characteristics of prepared samples. The XRD study confirms that the pure and doped ZnO thin-film samples with their crystalline nature have a wurtzite structure, without any impurity peaks of Ga and V in the ZnO structure. The crystallite size is observed to be 25.36 nm in ZnO, which decreased up to 9.38 nm as the Ga concentration was increased from 3 to 9% in the Zn0.97V0.03O sample. Further, the energy bandgap value of prepared samples has been observed to depict a blueshift for doped thin films up to 3.24 eV, compared with up to 3.07 eV in the case of the pure ZnO sample. Further, the temperature-dependent current–voltage study has shown that pure and Zn0.97Ga0.03O thin films conduct up to 50 K and 30 K, respectively, compared to Zn0.97V0.03O, Zn0.94V0.03Ga0.03O, Zn0.91V0.03Ga0.06O, and Zn0.88V0.03Ga0.09O thin films which do not conduct below 150 K, 170 K, 130 K and 130 K, respectively, indicating their high resistive nature. Therefore, it is concluded that Ga doping has made ZnO thin films a good transparent and conductive material for optoelectronic devices due to the high optical transparency of about 89%, a lower value of the activation energy of 0.02 eV, and the ability to facilitate the conduction process to 30 K.

Graphical Abstract