The binding energy, polarizability, and radiative lifetime of heavy hole \((hh)\) and light hole \(lh\) excitons in a \(GaAs\) quantum ring has been investigated via a variational approach and effective mass approximation. The impacts of geometric parameters, electric field \((F)\) , and pressure have also been analyzed, and the outcomes are compared with existing works. It is shown that the binding energy of the light hole exciton is lower than that of the heavy hole exciton at a given pressure. Furthermore, the electric field has a more pronounced effect on the exciton binding energy in larger quantum rings compared to smaller ones. The polarizability of the heavy hole exciton was found to be more sensitive to variations in height \((H)\) than that of the light hole exciton, particularly at lower electric field strengths. Additionally, our findings indicate that, as the pressure increases, the recombination process accelerates, especially in quantum rings with smaller radial thickness.
