<p>Solid–liquid interdiffusion (SLID) is a bonding technique which offers bonds with good mechanical, electrical, and hermetic performance, even for further steps that exceed its process temperature. The technique has been successfully employed in high-temperature applications, MEMS packaging, and 3D integration at wafer level. The recent trends of packaging larger wafer sizes, packages consisting of dissimilar materials, and/or temperature-sensitive materials has led to demands for SLID technologies with bonding temperatures below 200 °C. The Cu-(Sn-Bi) system, using eutectic Sn-Bi, can be bonded at low temperatures and has an expected thermal stability above 600 °C. This work presents the microstructure of Cu-(Sn-Bi) bondlines when bonded at different temperatures and time values, aiming to understand the growth dynamics. A model of the evolution is also proposed based on the phase diagrams of the materials involved in the system. Samples were bonded for 30&#xa0;min and 2&#xa0;h, with bonding temperatures ranging from 150 to 300 °C. Cross-sectional micrographs were analyzed and compared to the proposed model. Bonding temperature plays an important role in microstructures in the bondline. Below 186 °C (solid-state phase transition of Cu<sub>6</sub>Sn<sub>5</sub>), samples presented only Cu<sub>6</sub>Sn<sub>5</sub>; in contrast, samples bonded above this temperature contained only the Cu<sub>3</sub>Sn phase. Additionally, samples bonded above 271 °C (Bi melting point) showed a different microstructure to the rest.</p>

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Growth of Intermetallic Compounds in Cu-(Sn-Bi) SLID Bonds

  • Lisette Hernandez Gonzalez,
  • Knut Eilif Aasmundtveit,
  • Hoang-Vu Nguyen

摘要

Solid–liquid interdiffusion (SLID) is a bonding technique which offers bonds with good mechanical, electrical, and hermetic performance, even for further steps that exceed its process temperature. The technique has been successfully employed in high-temperature applications, MEMS packaging, and 3D integration at wafer level. The recent trends of packaging larger wafer sizes, packages consisting of dissimilar materials, and/or temperature-sensitive materials has led to demands for SLID technologies with bonding temperatures below 200 °C. The Cu-(Sn-Bi) system, using eutectic Sn-Bi, can be bonded at low temperatures and has an expected thermal stability above 600 °C. This work presents the microstructure of Cu-(Sn-Bi) bondlines when bonded at different temperatures and time values, aiming to understand the growth dynamics. A model of the evolution is also proposed based on the phase diagrams of the materials involved in the system. Samples were bonded for 30 min and 2 h, with bonding temperatures ranging from 150 to 300 °C. Cross-sectional micrographs were analyzed and compared to the proposed model. Bonding temperature plays an important role in microstructures in the bondline. Below 186 °C (solid-state phase transition of Cu6Sn5), samples presented only Cu6Sn5; in contrast, samples bonded above this temperature contained only the Cu3Sn phase. Additionally, samples bonded above 271 °C (Bi melting point) showed a different microstructure to the rest.