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<p>We have proposed a simple design of an ultra-broadband metamaterial absorber (MMA) that features a periodic array of vertical three-square patches (VTSPs) made of gallium nitride (GaN), attached to a GaN substrate in the THz region. The finite element method (FEM) simulation shows that the designed MMA achieves over 90% absorbance in the frequency range of 0.37–3.17 THz, with a relative bandwidth of about 158.19%. An equivalent circuit model (ECM) was developed and validated the ultra-broadband strong absorption, demonstrating excellent agreement with the FEM simulation results. Further field distribution analysis indicates that the observed ultra-broadband strong absorption in the proposed MMA primarily results from the excitation of cavity resonance (CR), localized surface plasmon resonance (LSPR), and guided mode resonance (GMR) with higher-order, along with the intrinsic losses of GaN. The analysis of the incidence angle and structural parameters confirms the exceptional wide-angle absorption capabilities and fabrication tolerance of the proposed MMA, which highlights both its reliability and stability in practical applications. The proposed MMA shows promise for applications in THz energy harvesting, stealth technologies, and thermal emission management.</p>

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Ultra-broadband and Wide-angle Metamaterial Absorber Based on Vertical Three-square Patches Structure Gallium Nitride for Terahertz Wave

  • 期刊论文

  • 发表日期：

    2025年8月6日

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  • Bingzhen Li,
  • Kefeng Ouyang,
  • Fangyuan Li,
  • Yan Li,
  • Qingqing Wu,
  • Xiao Zhou,
  • Songlin Yu,
  • Wangjun Ren,
  • Jijun Wang

摘要

We have proposed a simple design of an ultra-broadband metamaterial absorber (MMA) that features a periodic array of vertical three-square patches (VTSPs) made of gallium nitride (GaN), attached to a GaN substrate in the THz region. The finite element method (FEM) simulation shows that the designed MMA achieves over 90% absorbance in the frequency range of 0.37–3.17 THz, with a relative bandwidth of about 158.19%. An equivalent circuit model (ECM) was developed and validated the ultra-broadband strong absorption, demonstrating excellent agreement with the FEM simulation results. Further field distribution analysis indicates that the observed ultra-broadband strong absorption in the proposed MMA primarily results from the excitation of cavity resonance (CR), localized surface plasmon resonance (LSPR), and guided mode resonance (GMR) with higher-order, along with the intrinsic losses of GaN. The analysis of the incidence angle and structural parameters confirms the exceptional wide-angle absorption capabilities and fabrication tolerance of the proposed MMA, which highlights both its reliability and stability in practical applications. The proposed MMA shows promise for applications in THz energy harvesting, stealth technologies, and thermal emission management.