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<p>This paper presents the design and simulation of a high-performance broadband photodetector featuring a dual-heterojunction structure composed of few-layer graphene (FLG), ZnO nanowires (NWs), and a silicon (Si) substrate. Silvaco TCAD simulations were used to study the optoelectronic properties of the proposed device under room-temperature conditions. The integration of FLG with ZnO NWs significantly enhances carrier mobility and ultraviolet (UV) absorption, while the Si substrate extends the response into the near-infrared (NIR) region. The device thus demonstrates a broad spectral response from UV to NIR, with a peak performance at 480&#xa0;nm. The proposed photodetector achieves a sensitivity of 7.95&#xa0;×&#xa0;10<sup>7</sup>, an external quantum efficiency of 70.37%, and a photocurrent responsivity of 0.27 A/W at a reverse bias of −&#xa0;0.5&#xa0;V. It also exhibits ultrafast photoresponse times of 0.11&#xa0;ns (rise) and 0.12&#xa0;ns (fall). These enhancements are attributed to the synergistic material properties and the optimized dual-heterojunction design, which allows for the efficient separation and transport of photocarriers. The device’s low power consumption, high sensitivity, and rapid response make it a promising candidate for next-generation applications, such as 6G communication systems and Internet of Things (IoT) sensors.</p>

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Analysis of Few-Layer Graphene/ZnO Nanowires Photodetector on Si Substrate for 6G and IoT Applications

  • 期刊论文

  • 发表日期：

    2025年8月7日

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  • Shonak Bansal,
  • Arnav Bansal,
  • Krishna Prakash,
  • Payal Patial,
  • Kanwarpreet Kaur,
  • Anupma Gupta,
  • Mohammad Rashed Iqbal Faruque

摘要

This paper presents the design and simulation of a high-performance broadband photodetector featuring a dual-heterojunction structure composed of few-layer graphene (FLG), ZnO nanowires (NWs), and a silicon (Si) substrate. Silvaco TCAD simulations were used to study the optoelectronic properties of the proposed device under room-temperature conditions. The integration of FLG with ZnO NWs significantly enhances carrier mobility and ultraviolet (UV) absorption, while the Si substrate extends the response into the near-infrared (NIR) region. The device thus demonstrates a broad spectral response from UV to NIR, with a peak performance at 480 nm. The proposed photodetector achieves a sensitivity of 7.95 × 107, an external quantum efficiency of 70.37%, and a photocurrent responsivity of 0.27 A/W at a reverse bias of − 0.5 V. It also exhibits ultrafast photoresponse times of 0.11 ns (rise) and 0.12 ns (fall). These enhancements are attributed to the synergistic material properties and the optimized dual-heterojunction design, which allows for the efficient separation and transport of photocarriers. The device’s low power consumption, high sensitivity, and rapid response make it a promising candidate for next-generation applications, such as 6G communication systems and Internet of Things (IoT) sensors.