<p>Research on perovskite solar cells (PSCs) has, to date, revealed substantial potential for continued development and future commercialization. Within a relatively short time frame, these devices have achieved power conversion efficiency (PCE) surpassing that of traditional silicon-based solar cell technologies. In addition to their impressive performance, PSCs provide the benefits of reduced manufacturing costs and versatile fabrication on a broad range of substrates, positioning them as a promising alternative for next-generation photovoltaic applications. Hole transport layers play a critical role in facilitating charge carrier transport and significantly contribute to enhancing the overall PCE of PSCs. This study presents a comparative analysis of two MASnI<sub>3</sub>-based PSC architectures, aimed at identifying a more stable and optimized device configuration. The first structure features a single absorber layer composed of MASnI<sub>3</sub>, while the second incorporates a dual-layer absorber consisting of MASnI<sub>3</sub> and MASnBr<sub>3</sub>. We investigated the influence of various photovoltaic parameters—including doping density, absorber thickness, defect density of the MASnI<sub>3</sub> layer, and ambient temperature—during performance of both device structures. When simulated, the results revealed that the optimized configuration achieved PCE of 23.1%, with a fill factor of 78.70%, an open-circuit voltage (<i>V</i><sub>OC</sub>) of 0.87&#xa0;V, and a short-circuit current density (<i>J</i><sub>SC</sub>) of 33.2&#xa0;mA/cm<sup>2</sup>.</p>

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A Comparative Study of Different MASnI3-Based Perovskite Solar Cells to Identify an Optimized and Stable PSC Structure

  • Roshan Sahani,
  • Saurabh Kumar Pandey

摘要

Research on perovskite solar cells (PSCs) has, to date, revealed substantial potential for continued development and future commercialization. Within a relatively short time frame, these devices have achieved power conversion efficiency (PCE) surpassing that of traditional silicon-based solar cell technologies. In addition to their impressive performance, PSCs provide the benefits of reduced manufacturing costs and versatile fabrication on a broad range of substrates, positioning them as a promising alternative for next-generation photovoltaic applications. Hole transport layers play a critical role in facilitating charge carrier transport and significantly contribute to enhancing the overall PCE of PSCs. This study presents a comparative analysis of two MASnI3-based PSC architectures, aimed at identifying a more stable and optimized device configuration. The first structure features a single absorber layer composed of MASnI3, while the second incorporates a dual-layer absorber consisting of MASnI3 and MASnBr3. We investigated the influence of various photovoltaic parameters—including doping density, absorber thickness, defect density of the MASnI3 layer, and ambient temperature—during performance of both device structures. When simulated, the results revealed that the optimized configuration achieved PCE of 23.1%, with a fill factor of 78.70%, an open-circuit voltage (VOC) of 0.87 V, and a short-circuit current density (JSC) of 33.2 mA/cm2.