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<p>This work presents a comprehensive analysis of a graded barrier/buffer double-channel GaN high electron mobility transistor (HEMT) with a downward-graded AlGaN barrier, based on TCAD simulations for microwave power and RF applications. The impact of the grading concentration and the graded AlGaN barrier thickness on linearity metrics is initially investigated. Further optimization of the double-channel HEMT's linearity is achieved by replacing the GaN buffer with a graded AlGaN buffer. The proposed HEMT demonstrates improvements in terms of a higher third-order intercept point, a wider range of operating gate voltage, and lower IMD3 compared to the single-channel HEMT. This highlights the suitability of graded barrier/buffer double-channel GaN HEMT devices for designing linear amplifiers. The analysis emphasizes that appropriate selection of the grading concentration and graded barrier thickness can significantly enhance the device's linearity. This study also explores the optimal biasing conditions for the GaN HEMT to achieve minimum distortion and maximum gain. A subthreshold swing (SS) of 66&#xa0;mV/dec was attained for the proposed device, attributed to enhanced electron confinement in the two-dimensional electron gas (2DEG). The proposed HEMT exhibits a higher breakdown voltage (up to 560&#xa0;V), lower on-resistance, and lower subthreshold swing, making it an optimal candidate for microwave power applications. The key contribution of this work is the realization of a double-channel GaN HEMT with just two epitaxial layers on the buffer, which could be a game changer in the GaN market.</p>

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Improved Graded Barrier/Buffer Double-Channel GaN HEMT for High-Power RF Applications

  • 期刊论文

  • 发表日期：

    2025年8月8日

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  • Husna Hamza,
  • Anwar Jarndal

摘要

This work presents a comprehensive analysis of a graded barrier/buffer double-channel GaN high electron mobility transistor (HEMT) with a downward-graded AlGaN barrier, based on TCAD simulations for microwave power and RF applications. The impact of the grading concentration and the graded AlGaN barrier thickness on linearity metrics is initially investigated. Further optimization of the double-channel HEMT's linearity is achieved by replacing the GaN buffer with a graded AlGaN buffer. The proposed HEMT demonstrates improvements in terms of a higher third-order intercept point, a wider range of operating gate voltage, and lower IMD3 compared to the single-channel HEMT. This highlights the suitability of graded barrier/buffer double-channel GaN HEMT devices for designing linear amplifiers. The analysis emphasizes that appropriate selection of the grading concentration and graded barrier thickness can significantly enhance the device's linearity. This study also explores the optimal biasing conditions for the GaN HEMT to achieve minimum distortion and maximum gain. A subthreshold swing (SS) of 66 mV/dec was attained for the proposed device, attributed to enhanced electron confinement in the two-dimensional electron gas (2DEG). The proposed HEMT exhibits a higher breakdown voltage (up to 560 V), lower on-resistance, and lower subthreshold swing, making it an optimal candidate for microwave power applications. The key contribution of this work is the realization of a double-channel GaN HEMT with just two epitaxial layers on the buffer, which could be a game changer in the GaN market.