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<p>Nitrogen-doped indium gallium zinc oxide (IGZO) films were deposited at different nitrogen-to-oxygen flow ratios using radio frequency magnetron sputtering. The dielectric function of the films was determined by fitting spectroscopic ellipsometry data using the B-spline function, and the influence of nitrogen content on the film optical properties was investigated with a combination of x-ray diffraction, energy-dispersive spectroscopy, and x-ray photoelectron spectroscopy. The real part of the dielectric function revealed that the nitrogen addition reduced the film compactness, resulting in an increase in the oscillator width of the Lorentz oscillator. The fitting results based on the Cody–Lorentz model for the imaginary part of the dielectric function showed that with nitrogen content up to 0.1 at.%, the Urbach energy <i>E</i><sub>u</sub> clearly increased and the film resistivity increased by orders of magnitude. However, only a slight variation in bandgap was observed, and as the content was further increased, both the bandgap and <i>E</i><sub>u</sub> decreased significantly. From the similarity in the change trend with nitrogen content between the thermal activation energy of the conductivity and the <i>E</i><sub>u</sub> of the band tail, it was determined that the value of <i>E</i><sub>u</sub>, characterizing the structural disorder, is closely related to the location of the Fermi level in the gap.</p>

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Effects of Nitrogen Content on Optical Properties of IGZON Films

  • 期刊论文

  • 发表日期：

    2025年8月9日

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  • Shunhui Lin,
  • Qingqin Wu,
  • Dancheng Huang,
  • Yi Shen,
  • Weixuan Meng,
  • Ming Zeng,
  • Yunpeng Yu

摘要

Nitrogen-doped indium gallium zinc oxide (IGZO) films were deposited at different nitrogen-to-oxygen flow ratios using radio frequency magnetron sputtering. The dielectric function of the films was determined by fitting spectroscopic ellipsometry data using the B-spline function, and the influence of nitrogen content on the film optical properties was investigated with a combination of x-ray diffraction, energy-dispersive spectroscopy, and x-ray photoelectron spectroscopy. The real part of the dielectric function revealed that the nitrogen addition reduced the film compactness, resulting in an increase in the oscillator width of the Lorentz oscillator. The fitting results based on the Cody–Lorentz model for the imaginary part of the dielectric function showed that with nitrogen content up to 0.1 at.%, the Urbach energy Eu clearly increased and the film resistivity increased by orders of magnitude. However, only a slight variation in bandgap was observed, and as the content was further increased, both the bandgap and Eu decreased significantly. From the similarity in the change trend with nitrogen content between the thermal activation energy of the conductivity and the Eu of the band tail, it was determined that the value of Eu, characterizing the structural disorder, is closely related to the location of the Fermi level in the gap.