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<p>This study systematically investigated the effect of gelatin molecular weight (MW) on the microstructure of nanotwinned copper (nt-Cu) fabricated by direct-current electrodeposition. Electron backscatter diffraction (EBSD) and electrochemical analyses reveal that low MW gelatin (&lt;&#xa0;10&#xa0;kDa) significantly enhances (111) orientation (up to 75.6%) and twin density (up to 63%) by selectively suppressing the growth of high-surface-energy planes and promoting stress-induced twin nucleation, while medium MW gelatin (10–100&#xa0;kDa) exhibits similar but weaker modulation effects. In contrast, high MW gelatin (&gt;&#xa0;100&#xa0;kDa) induces random orientation and suppresses twin formation (twin density&#xa0;&lt;&#xa0;40%) through non-selective adsorption and uniform suppression of all crystallographic planes. Competitive adsorption experiments demonstrate that high MW gelatin dominates interfacial adsorption, thereby diminishing the structural modulation capacity of low MW gelatin. Electrochemical characterization further confirms that increasing MW correlates with thicker adsorption layers and elevated deposition overpotential, thereby inhibiting Cu<sup>2+</sup> reduction kinetics. These findings provide critical insights for microstructure control in nt-Cu fabrication.</p>

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Effect of Gelatin Molecular Weight on Microstructure of Nanotwinned Cu Fabricated by Direct Current Electrodeposition

  • 期刊论文

  • 发表日期：

    2025年7月22日

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  • Y. Z. Liu,
  • S. N. Zhang,
  • F. F. Huang,
  • J. Ren,
  • M. L. Huang

摘要

This study systematically investigated the effect of gelatin molecular weight (MW) on the microstructure of nanotwinned copper (nt-Cu) fabricated by direct-current electrodeposition. Electron backscatter diffraction (EBSD) and electrochemical analyses reveal that low MW gelatin (< 10 kDa) significantly enhances (111) orientation (up to 75.6%) and twin density (up to 63%) by selectively suppressing the growth of high-surface-energy planes and promoting stress-induced twin nucleation, while medium MW gelatin (10–100 kDa) exhibits similar but weaker modulation effects. In contrast, high MW gelatin (> 100 kDa) induces random orientation and suppresses twin formation (twin density < 40%) through non-selective adsorption and uniform suppression of all crystallographic planes. Competitive adsorption experiments demonstrate that high MW gelatin dominates interfacial adsorption, thereby diminishing the structural modulation capacity of low MW gelatin. Electrochemical characterization further confirms that increasing MW correlates with thicker adsorption layers and elevated deposition overpotential, thereby inhibiting Cu2+ reduction kinetics. These findings provide critical insights for microstructure control in nt-Cu fabrication.