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<p>The correlation between barrier height, φ<sub>B</sub> , and oxygen concentration in Ti-/4H-SiC Schottky barrier diodes (Ti-SBDs) was found by forming nanoscale Ti-O layers (Ti<sub>x</sub>O) with different oxygen concentrations at the interface between titanium and n-SiC using interstitial oxygen. The φ<sub>B</sub> became substantially lower with the increase of oxygen concentration. The interstitial oxygen is used to control the Fermi energy, which is predicted by ab initio calculations. It was found that the interstitial oxygen penetrates into the Ti phase and stabilizes the Ti<sub>x</sub>O layer. To realize this, Ti<sub>x</sub>O layers with different oxygen concentrations were formed at the Ti/4H-SiC interface by annealing with different hydrogen gas concentrations. and, by controlling the oxygen concentration to maintain the continuity of the Ti/4H-SiC hcp structure, a tunable Schottky barrier height of SiC-SBD <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_12184_Article_IEq1.gif" Format="GIF" Height="17" Rendition="HTML" Resolution="72" Type="Linedraw" Width="21" /> </InlineMediaObject> <EquationSource Format="TEX">\({\phi }_{\text{B}}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>ϕ</mi> <mtext>B</mtext> </msub> </math></EquationSource> </InlineEquation> was achieved. A mechanism is proposed for the segregation of oxygen atoms at the Ti/4H-SiC interface to form different types of Ti<sub>x</sub>O layers by using hydrogen gas. The possible range of oxygen content in the Ti<sub>x</sub>O layer was predicted from first-principles calculations, and <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_12184_Article_IEq1.gif" Format="GIF" Height="17" Rendition="HTML" Resolution="72" Type="Linedraw" Width="21" /> </InlineMediaObject> <EquationSource Format="TEX">\({\phi }_{\text{B}}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>ϕ</mi> <mtext>B</mtext> </msub> </math></EquationSource> </InlineEquation> was found to vary with the oxygen content.</p>

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Barrier Height Modification of Ti/SiC Schottky Barrier Diode by Formation of Intruded Ti-O Layer Interface

  • 期刊论文

  • 发表日期：

    2025年7月23日

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  • Takatoshi Nagano,
  • Yusuke Maeyama,
  • Makiko Noma,
  • Akihiko Shibukawa,
  • Yasushi Sasajima,
  • Jin Onuki

摘要

The correlation between barrier height, φB , and oxygen concentration in Ti-/4H-SiC Schottky barrier diodes (Ti-SBDs) was found by forming nanoscale Ti-O layers (TixO) with different oxygen concentrations at the interface between titanium and n-SiC using interstitial oxygen. The φB became substantially lower with the increase of oxygen concentration. The interstitial oxygen is used to control the Fermi energy, which is predicted by ab initio calculations. It was found that the interstitial oxygen penetrates into the Ti phase and stabilizes the TixO layer. To realize this, TixO layers with different oxygen concentrations were formed at the Ti/4H-SiC interface by annealing with different hydrogen gas concentrations. and, by controlling the oxygen concentration to maintain the continuity of the Ti/4H-SiC hcp structure, a tunable Schottky barrier height of SiC-SBD \({\phi }_{\text{B}}\) ϕ B was achieved. A mechanism is proposed for the segregation of oxygen atoms at the Ti/4H-SiC interface to form different types of TixO layers by using hydrogen gas. The possible range of oxygen content in the TixO layer was predicted from first-principles calculations, and \({\phi }_{\text{B}}\) ϕ B was found to vary with the oxygen content.