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<p>This study investigates the impact of argon gas pressure on the structural, morphological, optical, and photosensing characteristics of tin sulfide (SnS) thin films prepared using radio-frequency (RF) magnetron sputtering. The influence of deposition pressure on the prepared SnS thin films was examined using various characterization techniques, including x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, UV–visible spectroscopy (UV–Vis), and field-emission scanning electron microscopy (FE-SEM). XRD study confirmed that all prepared SnS thin films have an orthorhombic crystal structure and polycrystalline nature. The crystallite size, influenced by deposition pressure, increased from ~ 17.2 nm to 33.1&#xa0;nm with an increase in argon gas deposition pressure. Raman analysis confirmed the formation of a pure SnS phase without secondary phases at 5 Pa and 7&#xa0;Pa deposition pressures. However, a minor impurity phase of Sn<sub>2</sub>S<sub>3</sub> was observed for films prepared at 1 Pa and 3&#xa0;Pa. UV–Vis analysis revealed that the optical absorption of the deposited films increased, while the direct-bandgap energy decreased from 1.51&#xa0;eV to 1.29&#xa0;eV with an increase in deposition pressure. FE-SEM micrographs showed uniform, smooth, and compact surface morphology. The photosensing properties indicated that the SnS film deposited at 5&#xa0;Pa pressure exhibited superior photoresponse, with better photoresponsivity (54.88 µA W<sup>−1</sup>), photosensitivity (33.06%), specific detectivity (4.87 × 10<sup>7</sup> Jones), and rise and decay times (1.13 s and 0.82&#xa0;s).</p> Graphical Abstract <p></p>

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Optimization of Deposition Pressure for Enhanced Photosensing Performance of SnS Photodetectors Fabricated Using RF Magnetron Sputtering

  • 期刊论文

  • 发表日期：

    2025年7月5日

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  • Abbas S. Pathan,
  • Yogesh V. Hase,
  • Abhijit S. Landge,
  • Sandesh R. Jadkar,
  • Sandeep A. Arote

摘要

This study investigates the impact of argon gas pressure on the structural, morphological, optical, and photosensing characteristics of tin sulfide (SnS) thin films prepared using radio-frequency (RF) magnetron sputtering. The influence of deposition pressure on the prepared SnS thin films was examined using various characterization techniques, including x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, UV–visible spectroscopy (UV–Vis), and field-emission scanning electron microscopy (FE-SEM). XRD study confirmed that all prepared SnS thin films have an orthorhombic crystal structure and polycrystalline nature. The crystallite size, influenced by deposition pressure, increased from ~ 17.2 nm to 33.1 nm with an increase in argon gas deposition pressure. Raman analysis confirmed the formation of a pure SnS phase without secondary phases at 5 Pa and 7 Pa deposition pressures. However, a minor impurity phase of Sn2S3 was observed for films prepared at 1 Pa and 3 Pa. UV–Vis analysis revealed that the optical absorption of the deposited films increased, while the direct-bandgap energy decreased from 1.51 eV to 1.29 eV with an increase in deposition pressure. FE-SEM micrographs showed uniform, smooth, and compact surface morphology. The photosensing properties indicated that the SnS film deposited at 5 Pa pressure exhibited superior photoresponse, with better photoresponsivity (54.88 µA W−1), photosensitivity (33.06%), specific detectivity (4.87 × 107 Jones), and rise and decay times (1.13 s and 0.82 s).

Graphical Abstract