<p>The solid-state interfacial reactions between silver (Ag) and indium (In) at temperatures ranging from room temperature to 120&#xa0;°C were investigated in this study. During the sample assembling process at room temperature, continuous AgIn<sub>2</sub> is observed at the interface, indicating that Ag and In atoms diffuse to form the intermetallic compound (IMC) AgIn<sub>2</sub> at a high growth rate at room temperature. As for the Ag-In interfacial reactions at 80&#xa0;°C, 100&#xa0;°C, and 120&#xa0;°C, the IMCs formed at the interface are Ag<sub>2</sub>In and AgIn<sub>2</sub>. The thicknesses of Ag<sub>2</sub>In and AgIn<sub>2</sub> layers increase both with the aging temperature and reaction time, and their growth is represented by a diffusion-controlled reaction. Results of a tantalum (Ta) diffusion marker experiment demonstrate that the growth of the IMCs is dominated by the diffusion of In toward the Ag direction, away from the original interface.</p>

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Diffusion Marker Experiment for Diffusion Between Silver and Solid Indium

  • Yu-Hsin Lin,
  • I-Chieh. Fang,
  • Fu-Ling Chang,
  • Chih-Chia Chang,
  • C. Robert Kao

摘要

The solid-state interfacial reactions between silver (Ag) and indium (In) at temperatures ranging from room temperature to 120 °C were investigated in this study. During the sample assembling process at room temperature, continuous AgIn2 is observed at the interface, indicating that Ag and In atoms diffuse to form the intermetallic compound (IMC) AgIn2 at a high growth rate at room temperature. As for the Ag-In interfacial reactions at 80 °C, 100 °C, and 120 °C, the IMCs formed at the interface are Ag2In and AgIn2. The thicknesses of Ag2In and AgIn2 layers increase both with the aging temperature and reaction time, and their growth is represented by a diffusion-controlled reaction. Results of a tantalum (Ta) diffusion marker experiment demonstrate that the growth of the IMCs is dominated by the diffusion of In toward the Ag direction, away from the original interface.