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<p>The characterization of the principal figures of merit of avalanche photodiodes (APDs) has been revisited through characterization at high operating temperature of two types of recently developed short-wave infrared HgCdTe avalanche photodiodes with variable architecture and Cd composition. In particular, we show the importance of characterizing the gain of the avalanche photodiodes with signals and optical coupling that are representative of the use case of the avalanche photodiodes, and we propose a new procedure to characterize the loss of information through a direct measurement of the quantum efficiency-to-excess noise ratio (QEFR). The characterization results show that HgCdTe APD avalanche photodiodes with the highest Cd composition can be operated without anti-reflective coating at a gain of 100 and a high QEFR = 0.45 at QE = 0.63, corresponding to a low avalanche excess noise factor <i>F</i> = 1.3–1.4 and low input-referred background noise, ranging from 18 to 170&#xa0;fW/√Hz at <i>T</i> = 243–300&#xa0;K at bandwidth-compatible free-space optical communications up to data rates of 2.8&#xa0;Gbps.</p>

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High Operating Temperature Performance Characterization of SWIR HgCdTe Avalanche Photodiodes

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年7月8日

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  • Johan Rothman,
  • Timothée Guerra,
  • Julie Aberge,
  • Antoine Coquiard,
  • Sylvain Gout,
  • Maxime Lonjon,
  • Anaëlle Montel,
  • Loïc Lechevallier,
  • Amoury Mavel,
  • Sebsatien Renet,
  • Frederic Berger,
  • Aurelie Vandeneynde,
  • Sandy Brunet-Manquat

摘要

The characterization of the principal figures of merit of avalanche photodiodes (APDs) has been revisited through characterization at high operating temperature of two types of recently developed short-wave infrared HgCdTe avalanche photodiodes with variable architecture and Cd composition. In particular, we show the importance of characterizing the gain of the avalanche photodiodes with signals and optical coupling that are representative of the use case of the avalanche photodiodes, and we propose a new procedure to characterize the loss of information through a direct measurement of the quantum efficiency-to-excess noise ratio (QEFR). The characterization results show that HgCdTe APD avalanche photodiodes with the highest Cd composition can be operated without anti-reflective coating at a gain of 100 and a high QEFR = 0.45 at QE = 0.63, corresponding to a low avalanche excess noise factor F = 1.3–1.4 and low input-referred background noise, ranging from 18 to 170 fW/√Hz at T = 243–300 K at bandwidth-compatible free-space optical communications up to data rates of 2.8 Gbps.