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<p>Gold is used as the interconnect material in integrated circuits when high stability is essential. This study investigated chemical mechanical polishing (CMP) of gold to achieve a smooth surface. Inspired by gold-leaching technology, I<sub>2</sub> and KI were introduced into CMP slurries. The results reveal that scratches on the gold surface after CMP are primarily caused by the residual gold debris on the polishing pad, not big abrasive particles. In situ conditioning can promptly remove the gold debris, minimizing scratches. Moreover, the interaction between gold and the I<sub>2</sub>-I<sup>−</sup> system significantly raises the material removal rate (MRR) from only 0.6&#xa0;nm/min to 129.3&#xa0;nm/min, and helps to achieve a relatively smooth surface with a surface roughness <i>S</i><sub>a</sub> of 9.86&#xa0;nm. Concerning the corrosive wear mechanism in CMP, I<sub>2</sub> and I<sup>−</sup> generate I<sub>3</sub><sup>−</sup>, which react with gold to form soluble species like AuI<sub>2</sub><sup>−</sup> and AuI<sub>4</sub><sup>−</sup>, promoting corrosion. The gold surface film, made up of undetached species and unreacted gold, becomes fragile. It can be easily abraded by silica particles, resulting in a high MRR. This study offers a promising CMP solution for attaining a high-quality gold surface for fabricating interconnects.</p>

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High-Quality Chemical Mechanical Polishing of Gold using the I2-I− System for Interconnects Application

  • 期刊论文

  • 发表日期：

    2025年7月1日

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  • Zhikang Shi,
  • Yongshun Zhang,
  • Xin Li,
  • Xinzhu Li,
  • Yiming Tian,
  • Yanjun Han,
  • Pengfei Sun,
  • Qijian Zhao,
  • Liang Jiang,
  • Linmao Qian

摘要

Gold is used as the interconnect material in integrated circuits when high stability is essential. This study investigated chemical mechanical polishing (CMP) of gold to achieve a smooth surface. Inspired by gold-leaching technology, I2 and KI were introduced into CMP slurries. The results reveal that scratches on the gold surface after CMP are primarily caused by the residual gold debris on the polishing pad, not big abrasive particles. In situ conditioning can promptly remove the gold debris, minimizing scratches. Moreover, the interaction between gold and the I2-I− system significantly raises the material removal rate (MRR) from only 0.6 nm/min to 129.3 nm/min, and helps to achieve a relatively smooth surface with a surface roughness Sa of 9.86 nm. Concerning the corrosive wear mechanism in CMP, I2 and I− generate I3−, which react with gold to form soluble species like AuI2− and AuI4−, promoting corrosion. The gold surface film, made up of undetached species and unreacted gold, becomes fragile. It can be easily abraded by silica particles, resulting in a high MRR. This study offers a promising CMP solution for attaining a high-quality gold surface for fabricating interconnects.