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<p>Experimental data of temperature-dependent Hall-effect measurements on <i>n</i>-type β-Ga<sub>2</sub>O<sub>3</sub> samples have accumulated rapidly over the past decade. Simultaneous fits to the reported data of the temperature dependence of the electrical conductivity, the Hall coefficient, and the Hall mobility on variously grown <i>n</i>-type β-Ga<sub>2</sub>O<sub>3</sub> samples have been performed taking into account various electron scattering mechanisms and hopping conduction mechanisms. Besides shallow hydrogenic donor states between which hopping conduction occurs, an additional deep level with ionization energy of about 50&#xa0;meV is found in almost all the investigated samples. In addition to the dominant scattering mechanisms due to polar optical phonon scattering at high temperatures and ionized-impurity scattering at low temperatures, significant effects of acoustic phonon scattering and neutral-impurity scattering due to both the shallow and deep donor levels have been revealed for free-electron conduction in the intermediate temperature range. In the samples with small concentrations of shallow donors, nearest-neighbor hopping is found to dominate at low temperatures, whereas the dominance of Mott-type variable-range hopping is found for heavily doped samples. Regarding the ionization energy of the shallow hydrogenic donor level, a linear relation of <i>E</i><sub><i>D</i></sub> = <i>E</i><sub><i>D</i>0</sub> − <i>α</i><sub>0</sub><i>N</i><sub><i>A</i></sub><sup>1/3</sup>, where <i>E</i><sub><i>D</i>0</sub> = 40&#xa0;meV and <i>α</i><sub>0</sub> = 4.3 <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_12087_Article_IEq1.gif" Format="GIF" Height="13" Rendition="HTML" Resolution="72" Type="Linedraw" Width="19" /> </InlineMediaObject> <EquationSource Format="TEX">\(\times\)</EquationSource> <EquationSource Format="MATHML"><math> <mo>×</mo> </math></EquationSource> </InlineEquation> 10<sup>−5</sup>&#xa0;meV cm, has been obtained, with <i>N</i><sub><i>A</i></sub> denoting the concentration of compensating acceptors.</p>

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Electron Scattering and Hopping Conduction Mechanisms in n-type β-Ga2O3

  • 期刊论文

  • 发表日期：

    2025年6月23日

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  • Yasutomo Kajikawa

摘要

Experimental data of temperature-dependent Hall-effect measurements on n-type β-Ga2O3 samples have accumulated rapidly over the past decade. Simultaneous fits to the reported data of the temperature dependence of the electrical conductivity, the Hall coefficient, and the Hall mobility on variously grown n-type β-Ga2O3 samples have been performed taking into account various electron scattering mechanisms and hopping conduction mechanisms. Besides shallow hydrogenic donor states between which hopping conduction occurs, an additional deep level with ionization energy of about 50 meV is found in almost all the investigated samples. In addition to the dominant scattering mechanisms due to polar optical phonon scattering at high temperatures and ionized-impurity scattering at low temperatures, significant effects of acoustic phonon scattering and neutral-impurity scattering due to both the shallow and deep donor levels have been revealed for free-electron conduction in the intermediate temperature range. In the samples with small concentrations of shallow donors, nearest-neighbor hopping is found to dominate at low temperatures, whereas the dominance of Mott-type variable-range hopping is found for heavily doped samples. Regarding the ionization energy of the shallow hydrogenic donor level, a linear relation of ED = ED0 − α0NA1/3, where ED0 = 40 meV and α0 = 4.3 \(\times\) × 10−5 meV cm, has been obtained, with NA denoting the concentration of compensating acceptors.