<p>This study investigates the effects of potassium (K) doping on the structural, morphological, and electrical properties of zinc oxide (ZnO) nanoparticles. K-doped ZnO was synthesized and characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Fourier transform infrared (FTIR) spectroscopy. XRD analysis revealed a hexagonal wurtzite structure, with significant shifts in diffraction peaks, particularly at 30 wt% K doping, indicating lattice expansion along the <i>a</i>-axis. The calculated lattice parameter for the <i>a</i>-axis increased from 3.249&#xa0;Å to 4.88&#xa0;Å, suggesting that K<sup>+</sup> ions substitute Zn<sup>2+</sup>, causing lateral distortion in the lattice. Crystallite size was estimated to be 32&#xa0;nm with a microstrain of 0.0015. Electrical measurements showed that resistivity decreases with increasing temperature, following an inverse trend typical of semiconductors. A plot of ln(ρ) versus 1000/T demonstrated an activation energy of 0.57&#xa0;eV. Temperature-dependent current measurements revealed stable current up to 120°C, followed by an exponential increase, highlighting the material’s sensitivity to heat. These findings provide valuable insights for optimizing K-doped ZnO for electronic and optoelectronic applications, offering improved charge carrier mobility and thermal stability.</p> Graphical Abstract <p></p>

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The Effects of Potassium Doping on the Structural Integrity and Electrical Properties of Zinc Oxide Nanoparticles

  • Lila Abdulaziz Alkattaby,
  • Mohammad Mujahid

摘要

This study investigates the effects of potassium (K) doping on the structural, morphological, and electrical properties of zinc oxide (ZnO) nanoparticles. K-doped ZnO was synthesized and characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Fourier transform infrared (FTIR) spectroscopy. XRD analysis revealed a hexagonal wurtzite structure, with significant shifts in diffraction peaks, particularly at 30 wt% K doping, indicating lattice expansion along the a-axis. The calculated lattice parameter for the a-axis increased from 3.249 Å to 4.88 Å, suggesting that K+ ions substitute Zn2+, causing lateral distortion in the lattice. Crystallite size was estimated to be 32 nm with a microstrain of 0.0015. Electrical measurements showed that resistivity decreases with increasing temperature, following an inverse trend typical of semiconductors. A plot of ln(ρ) versus 1000/T demonstrated an activation energy of 0.57 eV. Temperature-dependent current measurements revealed stable current up to 120°C, followed by an exponential increase, highlighting the material’s sensitivity to heat. These findings provide valuable insights for optimizing K-doped ZnO for electronic and optoelectronic applications, offering improved charge carrier mobility and thermal stability.

Graphical Abstract