<p>Metal-induced crystallization (MIC) is an innovative and cost-effective technique to transform an amorphous semiconductor into a polycrystalline structure. It provides precise control over structural defects and crystallization kinetics under a nucleation process for superior thermoelectric transport properties. The present study deals with the sequential growth of a silver-germanium (Ag/Ge) bilayer system on glass substrate via thermal evaporation at room temperature. The evolution of Ag-induced crystallization of amorphous (a-Ge) thin films was monitored under heat treatment at temperatures of 100°C, 200°C, 300°C, 400°C, and 500°C. Thermally activated MIC is believed to be more advantageous than conventional methods for phase transition. The structural properties of Ag-mediated Ge-films were studied to highlight the preferential crystal growth with major grain growth and reduced grain boundaries. Optical measurements revealed a redshift in the bandgap with an increase in the annealing temperature, attributed to a significant reduction in local defect density. It was also found that the temperature-dependent morphology evolution has a primary role in tuning the electrical, optical, and thermoelectric characteristics of Ag/Ge thin film. Maximum electrical conductivity of 922.73&#xa0;S&#xa0;m⁻¹, Seebeck coefficient of 366.39&#xa0;μV K⁻¹, and power factor of 123.868&#xa0;μW m⁻¹K⁻² were obtained. This experimental work demonstrates a promising combinatorial approach for the fast crystallization of amorphous germanium thin films at fairly low temperature in order to facilitate thermoelectric power generation.</p> Graphical Abstract <p></p>