Enhanced Thermoelectric Performance of Cu2(Se,S) Films by S Substitution and Output Power for Its Flexible Thermoelectric Generator
摘要
This study is focused on the carrier transport, thermoelectric performance, and flexibility of S-doped β-Cu2Se film and the output power of its thermoelectric generator. Experimental results demonstrated that the doped S replaced Se in the β-Cu2Se lattice, forming a Cu2(Se,S) solid solution. The carrier concentration and electrical conductivity decreased and the mobility, Seebeck coefficient, and power factor increased with increasing S content in the deposited Cu2(Se,S) films. At room temperature, the deposited Cu2(Se,S) film with 6.3 at.% S content reached a maximum Seebeck coefficient of 57 µV K−1 and power factor of 0.52 mW m−1 K−2. After 1500 forward and back bending cycles, the loss of electrical conductivity under compressive and tensile stress was only 7% and 13%, respectively. This demonstrated that the deposited Cu2(Se,S) solid solution films possessed outstanding flexibility. The maximum power density (PDmax) of the thermoelectric generator for S5 films (6.3 at.% S content) was 5.43 W m−2 and 9.09 W m−2 for ΔT = 30 K and 40 K, respectively. The mean normalized output power density (PDmax ·L/ΔT2) reached 234.29 µW m−1 K−2.
Graphical Abstract