<p>Luminescence properties of Li<sub>2</sub>CeO<sub>3</sub> activated with the trivalent lanthanide Er<sup>3+</sup> prepared by solid-state reaction are reported. The x-ray diffraction and scanning electron microscopy analysis revealed the phases and particle size of the as-synthesized materials, respectively. Li<sub>2</sub>CeO<sub>3</sub> crystallized in a cubic structure with the space group Fm–3&#xa0;m. Photoluminescence in the near-infrared (NIR) region was analyzed using spectrophotometry. A typical emission around 1538&#xa0;nm was recorded. In the excitation spectrum, in addition to the sharp lines arising from f–f transitions, a broad band around 380&#xa0;nm was also observed. The broad band signifies host sensitization of Er<sup>3+</sup> emissions. It is suggested that these results can be exploited for various applications. For example, the phosphor can be used for spectral modification to extend the spectral range of some solar cells. NIR light-emitting diodes may be fabricated by coating this phosphor on 380-nm chips.</p> Graphical Abstract <p></p>

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Host-Sensitized Near-Infrared Luminescence in Li2CeO3:Er3+ for Solar Spectrum Modifications and NIR LED

  • P. K. Tawalare,
  • Shruti P. Dhale,
  • Nilesh S. Ugemuge,
  • P. P. Lohe,
  • Renuka Nafdey,
  • R. J. Krupadam,
  • S. V. Moharil

摘要

Luminescence properties of Li2CeO3 activated with the trivalent lanthanide Er3+ prepared by solid-state reaction are reported. The x-ray diffraction and scanning electron microscopy analysis revealed the phases and particle size of the as-synthesized materials, respectively. Li2CeO3 crystallized in a cubic structure with the space group Fm–3 m. Photoluminescence in the near-infrared (NIR) region was analyzed using spectrophotometry. A typical emission around 1538 nm was recorded. In the excitation spectrum, in addition to the sharp lines arising from f–f transitions, a broad band around 380 nm was also observed. The broad band signifies host sensitization of Er3+ emissions. It is suggested that these results can be exploited for various applications. For example, the phosphor can be used for spectral modification to extend the spectral range of some solar cells. NIR light-emitting diodes may be fabricated by coating this phosphor on 380-nm chips.

Graphical Abstract