Anionic Isoelectronic Substitution Effects on Thermal Stability and Thermoelectric Performance of PbTe-PbSe Compounds
摘要
Here, we report that a combination of vacuum melting and spark plasma sintering efficiently enhances the thermoelectric properties of the PbTe-PbSe compounds. Thermal analysis results show that all the PbTe1−xSex samples have excellent thermal stability. Positron annihilation spectroscopy results indicate improvement of the crystal quality in all obtained PbTe1−xSex samples. X-ray photoelectron spectroscopy studies revealed the presence of Pb2+, Pb4+, Te2−, Te4+, Se2− states of Pb, Te, and Se. Meanwhile, replacing the isoelectronic cations with those of different electronegativity will lead to a variation in carrier concentration. All samples exhibit p-type conduction with carrier concentrations varying from 0.07 × 1019 to 7.34 × 1019 cm−3, since carrier mobility changes from 4.7 to 727.7 cm2 V−1 s−1 at room temperature. Therefore, the maximum figure of merit (ZT) value reaches 0.6 at 773 K for the PbSe0.95Te0.05 sample benefiting from the greatly reduced thermal conductivity, which is three times more than the intrinsic PbSe. The peak ZT value of 0.70 at 773 K is obtained in PbTe0.98Se0.02 due to the excellent power factor. Valuable insight can be obtained from a quantitative analysis of the thermoelectric transport in PbTe-PbSe compounds with the anion vacancies (Se2− and Te2−).
Graphical Abstract