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<p>Mercury cadmium telluride (HgCdTe) with controlled <i>p</i>-type doping offers a means for obtaining high-performance infrared detectors. The precise doping concentration is also crucial to achieve high yield and improve the performance of HgCdTe-based infrared photodetectors, especially in terms of reducing the pixel size in focal-plane arrays (FPAs). In this study, we present the impact of annealing time on Cu-doped long-wave (LWIR) and mid-wave (MWIR) infrared HgCdTe thin films. Annealing time is an important parameter to achieve a desired and stable doping profile for HgCdTe thin films. Both MWIR and LWIR HgCdTe material were grown by molecular beam epitaxy and then doped with Cu at different annealing times. Generally, the doping level for both LWIR and MWIR material increases with increasing anneal time. However, different behavior was observed between LWIR and MWIR HgCdTe thin films with regard to longer annealing time. In this study, we also present the impact of annealing on the doping level of LWIR HgCdTe thin films with different thickness (4&#xa0;µm, 6&#xa0;µm, and 9&#xa0;µm) to give a better understanding of doping with regard to thicker LWIR HgCdTe films which might be needed to provide sufficient quantum efficiency for FPAs.</p>

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Impact of Annealing Time on Copper Doping Concentration for Mid-Wave and Long-Wave Mercury Cadmium Telluride

  • 期刊论文

  • 发表日期：

    2025年5月22日

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  • Arash Dehzangi,
  • John Armstrong,
  • Chris Schaake,
  • Tyler Morrison,
  • Mark Skokan,
  • Justin Wilks,
  • Sameer Ajmera,
  • Michael A. Kinch

摘要

Mercury cadmium telluride (HgCdTe) with controlled p-type doping offers a means for obtaining high-performance infrared detectors. The precise doping concentration is also crucial to achieve high yield and improve the performance of HgCdTe-based infrared photodetectors, especially in terms of reducing the pixel size in focal-plane arrays (FPAs). In this study, we present the impact of annealing time on Cu-doped long-wave (LWIR) and mid-wave (MWIR) infrared HgCdTe thin films. Annealing time is an important parameter to achieve a desired and stable doping profile for HgCdTe thin films. Both MWIR and LWIR HgCdTe material were grown by molecular beam epitaxy and then doped with Cu at different annealing times. Generally, the doping level for both LWIR and MWIR material increases with increasing anneal time. However, different behavior was observed between LWIR and MWIR HgCdTe thin films with regard to longer annealing time. In this study, we also present the impact of annealing on the doping level of LWIR HgCdTe thin films with different thickness (4 µm, 6 µm, and 9 µm) to give a better understanding of doping with regard to thicker LWIR HgCdTe films which might be needed to provide sufficient quantum efficiency for FPAs.