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<p>Sub-10-<i>μ</i>m pitch HgCdTe detectors are an important developing trend in IR imaging. A 3D HgCdTe junction formation simulator was established and used to model the process. A special designed junction spacing experiment was used to directly measure the junction expansion of a small-pitch detector. The experimental and simulation results corroborate each other and release the suggestion that, for sub-10-<i>μ</i>m pitch HgCdTe detectors, a low annealing temperature after ion implantation is needed. Moreover, a sub-region focal plane test using the suggested parameters was also carried out. It validated the correctness and effectiveness of the experiment and the 3D simulator. This work gives the fundamental concept of junction formation in HgCdTe, showing the proper parameters for fabricating the small-pitch detectors, and provides a numerical model for the simulation and optimization of the HgCdTe junction design.</p>

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Junction Modeling and Experimentation of Small-Pitch MWIR n-on-p HgCdTe Photodiodes with 3D Simulator Solution

  • 期刊论文

  • 发表日期：

    2025年5月6日

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  • Zhikai Gan,
  • Yu Zhao,
  • Quanzhi Sun,
  • Songmin Zhou,
  • Xi Wang,
  • Xun Li,
  • Liqi Zhu,
  • Chun Lin,
  • Li He

摘要

Sub-10-μm pitch HgCdTe detectors are an important developing trend in IR imaging. A 3D HgCdTe junction formation simulator was established and used to model the process. A special designed junction spacing experiment was used to directly measure the junction expansion of a small-pitch detector. The experimental and simulation results corroborate each other and release the suggestion that, for sub-10-μm pitch HgCdTe detectors, a low annealing temperature after ion implantation is needed. Moreover, a sub-region focal plane test using the suggested parameters was also carried out. It validated the correctness and effectiveness of the experiment and the 3D simulator. This work gives the fundamental concept of junction formation in HgCdTe, showing the proper parameters for fabricating the small-pitch detectors, and provides a numerical model for the simulation and optimization of the HgCdTe junction design.