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<p>Spin valve multilayered films were prepared by magnetron sputtering, and the change in the exchange bias in the spin valve-based magnetosensitive elements during short-term passage of direct current was investigated. It was found that the observed change occurs because of the current thermal effect. The new pinning direction coincides with the magnetization of the ferromagnetic layer adjacent to the antiferromagnet and depends on the applied magnetic field. The magnetic field sensor with a Wheatstone bridge configuration was made from a single spin valve film. A new method was developed for forming antiparallel pinning directions in the bridge arms using the current pulse. Before the current pulse, the output bridge signal is not dependent on the magnetic field, while after the pulse, the pinning directions change and the bridge sensitivity can reach 34&#xa0;mV/V/Oe. This method is suitable for spin valves both with the simplest and with complex composition. Laboratory models of magnetic field sensors were constructed based on the full Wheatstone bridge with four active magnetosensitive elements. The sensors are well suited for use in devices for magnetic field detection and measurement.</p> Graphical Abstract <p></p>

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Current-Induced Exchange Bias Switching in Spin Valve Elements of a Wheatstone Bridge

  • 期刊论文

  • 发表日期：

    2025年4月29日

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  • Larisa Naumova,
  • Anastasiya Germizina,
  • Roman Zavornitsyn,
  • Mikhail Milyaev,
  • Irina Maksimova,
  • Tatyana Chernyshova,
  • Vyacheslav Proglyado,
  • Vladimir Ustinov

摘要

Spin valve multilayered films were prepared by magnetron sputtering, and the change in the exchange bias in the spin valve-based magnetosensitive elements during short-term passage of direct current was investigated. It was found that the observed change occurs because of the current thermal effect. The new pinning direction coincides with the magnetization of the ferromagnetic layer adjacent to the antiferromagnet and depends on the applied magnetic field. The magnetic field sensor with a Wheatstone bridge configuration was made from a single spin valve film. A new method was developed for forming antiparallel pinning directions in the bridge arms using the current pulse. Before the current pulse, the output bridge signal is not dependent on the magnetic field, while after the pulse, the pinning directions change and the bridge sensitivity can reach 34 mV/V/Oe. This method is suitable for spin valves both with the simplest and with complex composition. Laboratory models of magnetic field sensors were constructed based on the full Wheatstone bridge with four active magnetosensitive elements. The sensors are well suited for use in devices for magnetic field detection and measurement.

Graphical Abstract