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<p>Zinc oxide (ZnO) thin films enjoy wide popularity for optoelectronic applications such as transparent conducting electrodes, ultraviolet photodetectors, and light-emitting diodes due to their unique optoelectronic characteristics, including excellent transparency, non-toxicity, and thermal and chemical stability. However, they face challenges due to low absorption and the presence of oxygen at the grain boundaries, which can degrade the overall optoelectronic behaviour. This research intends to overcome these difficulties and enrich the overall optoelectronic behaviour of ZnO thin films by introducing 1% titanium (Ti) and 1–3% copper (Cu) nanoparticles via the sol–gel technique. The effect of the processing and actions of Ti and Cu on the surface morphology, structural x-ray diffraction (XRD) peaks, and optoelectronic properties are evaluated. The surface morphology and XRD confirm the even dispersion of Ti/Cu and its concentrations. The ZnO layer doped with 1% Ti and 2% Cu exhibited reduced transmittance of 80%, enhanced absorbance of 0.1&#xa0;arb unit at 400&#xa0;nm, moderate bandgap of 3.25&#xa0;eV, higher refractive index of 2.09, improved extinction coefficient of 0.25, and better <i>J</i>–<i>V</i> performance including short-circuit current density (<i>J</i><sub>SC</sub>) of 4.64&#xa0;mA/cm<sup>2</sup>, open-circuit voltage (<i>V</i><sub>OC</sub>) of 0.65&#xa0;V, and a fill factor (FF) of 0.79. Hence, it is evident that optimizing the Cu concentration is pivotal in meeting specific requirements across various device applications.</p>

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Structural Modification and Enhancement of Optoelectronic Behaviour of ZnO Nanofilms Featuring Cu and Ti Particles

  • 期刊论文

  • 发表日期：

    2025年5月2日

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  • R. Venkatesh,
  • Aman Sharma,
  • Nagabhooshanam Nagarajan,
  • R. Venkatasubramanian,
  • Apurv Verma,
  • Vinayagam Mohanavel,
  • Manzoore Elahi M. Soudagar,
  • Sami Al Obaid,
  • Sulaiman Ali Alharbi

摘要

Zinc oxide (ZnO) thin films enjoy wide popularity for optoelectronic applications such as transparent conducting electrodes, ultraviolet photodetectors, and light-emitting diodes due to their unique optoelectronic characteristics, including excellent transparency, non-toxicity, and thermal and chemical stability. However, they face challenges due to low absorption and the presence of oxygen at the grain boundaries, which can degrade the overall optoelectronic behaviour. This research intends to overcome these difficulties and enrich the overall optoelectronic behaviour of ZnO thin films by introducing 1% titanium (Ti) and 1–3% copper (Cu) nanoparticles via the sol–gel technique. The effect of the processing and actions of Ti and Cu on the surface morphology, structural x-ray diffraction (XRD) peaks, and optoelectronic properties are evaluated. The surface morphology and XRD confirm the even dispersion of Ti/Cu and its concentrations. The ZnO layer doped with 1% Ti and 2% Cu exhibited reduced transmittance of 80%, enhanced absorbance of 0.1 arb unit at 400 nm, moderate bandgap of 3.25 eV, higher refractive index of 2.09, improved extinction coefficient of 0.25, and better J–V performance including short-circuit current density (JSC) of 4.64 mA/cm2, open-circuit voltage (VOC) of 0.65 V, and a fill factor (FF) of 0.79. Hence, it is evident that optimizing the Cu concentration is pivotal in meeting specific requirements across various device applications.