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<p>This work presents the efficient broadband photosensing device fabrication and testing of indium oxide thin films. The In<sub>2</sub>O<sub>3</sub> thin film (as optical sensing material)-based photodetectors were fabricated using a standard wafer-scale microfabrication process. The developed In<sub>2</sub>O<sub>3</sub> thin film-based photodetectors offer salient features: higher responsivity, improved detectivity, and higher photo-to-dark current ratio (PDCR). The photodetector showed improved performance metrics for 405&#xa0;nm, with PDCR, responsivity, and detectivity of 1.39&#xa0;×&#xa0;10<sup>2</sup>, 4.152&#xa0;×&#xa0;10<sup>2</sup> A/W, and 1.1&#xa0;×&#xa0;10<sup>14</sup>&#xa0;cm Hz<sup>1/2</sup> W<sup>−1</sup>, respectively. In addition, the tested devices exhibited highly repeatable results, with a response speed of 0.26/0.37&#xa0;s. These test results demonstrate the possibility of fabricating a high-performance and highly efficient broadband photodetector using In<sub>2</sub>O<sub>3</sub> thin films for future optoelectronics.</p>

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Microstructural Properties and Broadband Photosensing Demonstration Using In2O3 Thin Films

  • 期刊论文

  • 发表日期：

    2025年5月14日

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  • B. Sharmila,
  • Rakesh Kumar Sanodiya,
  • Priyanka Dwivedi

摘要

This work presents the efficient broadband photosensing device fabrication and testing of indium oxide thin films. The In2O3 thin film (as optical sensing material)-based photodetectors were fabricated using a standard wafer-scale microfabrication process. The developed In2O3 thin film-based photodetectors offer salient features: higher responsivity, improved detectivity, and higher photo-to-dark current ratio (PDCR). The photodetector showed improved performance metrics for 405 nm, with PDCR, responsivity, and detectivity of 1.39 × 102, 4.152 × 102 A/W, and 1.1 × 1014 cm Hz1/2 W−1, respectively. In addition, the tested devices exhibited highly repeatable results, with a response speed of 0.26/0.37 s. These test results demonstrate the possibility of fabricating a high-performance and highly efficient broadband photodetector using In2O3 thin films for future optoelectronics.