Noise Performance Evaluation of Recessed-Drain/Source Junctionless Gate-All-Around MOSFETs

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发表日期：

2025年4月18日

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Alok Kumar,
Tarun Kumar Gupta,
Bhavana P. Shrivastava,
Abhinav Gupta

摘要

When it comes to communication systems, noise becomes an important performance metric for every electronic component, as it reduces the effectiveness of MOSFETs in carrying out their activities in the nano-scale regions. Here, we propose a device, Re-D/S-JL-GAA MOSFET, by applying a recessed-drain/source and investigate its noise parameter performance over a range of device parameters and compare it with the JL-GAA MOSFET. The noise metrics, including the MNF, ACF, CCF, and Real $Z_0$ $Z_{0}$ have been examined. The noise parameters have been simulated with the help of the Silvaco ATLAS device simulator. In this research, we have examined the robustness of the noise parameters due to the device characteristics, including channel thickness, channel length, and doping, and found that the noise parameters were minimal when the gate work function and oxide thickness were both maximized. When comparing Re-D/S-JL-GAA to JL-GAA, it was found that the former was superior in high mobility materials and dielectrics, with the silicon material and $SiO_2$ $S i O_{2}$ dielectric exhibiting the lowest noise. Therefore, the Re-D/S-JL-GAA MOSFETs are the most reliable choice for use in low-noise applications.