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<p>In this study, we successfully deposited thin films (TFs) of Ge<sub>35</sub>Se<sub>65</sub> onto glass substrates using thermal evaporation under vacuum conditions. Following deposition, the films underwent annealing at temperatures between 300&#xa0;K and 523&#xa0;K. We investigated the structural and optical properties of the films through x-ray diffraction (XRD), scanning electron microscopy (SEM), and measurements of transmittance (<i>T</i><sub><i>λ</i></sub>) and reflectance (<i>R</i><sub><i>λ</i></sub>). The XRD analysis revealed that the films retained crystalline characteristics, with the average crystallite size increasing from 13.87&#xa0;nm to 17.85&#xa0;nm as the annealing temperature (<i>T</i><sub>ann</sub>) was increased. Optical transmittance spectra were obtained across a wavelength range of 200–2500&#xa0;nm for both as-deposited and annealed Ge<sub>35</sub>Se<sub>65</sub> TFs, with a particular focus on how annealing influenced their optical properties. We observed a notable increase in the optical band gap (<i>E</i><sub>g</sub>) from 2.637&#xa0;eV to 2.921&#xa0;eV with rising <i>T</i><sub>ann</sub>, while the width of the localized states tail (<i>E</i><sub><i>U</i></sub>) exhibited a decrease. This change in E<sub>g</sub> was correlated with the variations in the width of the localized states. Additionally, we conducted a comprehensive assessment of the effects of <i>T</i><sub>ann</sub> on various optical constants, including dispersion parameters (<i>E</i><sub>d</sub>, <i>E</i><sub><i>o</i></sub>), dielectric constant (ε<sub><i>L</i></sub>), and the ratio of charge carrier density to effective mass (N/m*). Furthermore, we applied the Arrhenius equation to examine electrical conductivity (σ) and activation energy (∆E). Our findings offer significant insights into how thermal processing influences the enhancement of optical and electrical properties in Ge<sub>35</sub>Se<sub>65</sub> TFs, highlighting their potential for applications in optoelectronic devices.</p>

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Influence of Annealing Temperature Variations on the Structural, Morphological, Optical and Electrical Properties of Ge35Se65 Thin Films

  • 期刊论文

  • 发表日期：

    2025年3月29日

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  • Abdel-naser A. Alfaqeer,
  • Mohamed E. El Sayed,
  • Yahya Alajlani,
  • Mohammad N. Murshed,
  • Abduelwhab B. Alwany,
  • Adnan Alnehia,
  • Ahmed Samir

摘要

In this study, we successfully deposited thin films (TFs) of Ge35Se65 onto glass substrates using thermal evaporation under vacuum conditions. Following deposition, the films underwent annealing at temperatures between 300 K and 523 K. We investigated the structural and optical properties of the films through x-ray diffraction (XRD), scanning electron microscopy (SEM), and measurements of transmittance (Tλ) and reflectance (Rλ). The XRD analysis revealed that the films retained crystalline characteristics, with the average crystallite size increasing from 13.87 nm to 17.85 nm as the annealing temperature (Tann) was increased. Optical transmittance spectra were obtained across a wavelength range of 200–2500 nm for both as-deposited and annealed Ge35Se65 TFs, with a particular focus on how annealing influenced their optical properties. We observed a notable increase in the optical band gap (Eg) from 2.637 eV to 2.921 eV with rising Tann, while the width of the localized states tail (EU) exhibited a decrease. This change in Eg was correlated with the variations in the width of the localized states. Additionally, we conducted a comprehensive assessment of the effects of Tann on various optical constants, including dispersion parameters (Ed, Eo), dielectric constant (εL), and the ratio of charge carrier density to effective mass (N/m*). Furthermore, we applied the Arrhenius equation to examine electrical conductivity (σ) and activation energy (∆E). Our findings offer significant insights into how thermal processing influences the enhancement of optical and electrical properties in Ge35Se65 TFs, highlighting their potential for applications in optoelectronic devices.