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<p>This study provides an in-depth exploration of the electronic and optical properties of NaBi(WO<sub>4</sub>)<sub>2</sub> crystal, with a focus on its potential applications in optoelectronic technologies. Absorbance measurements revealed a bandgap energy of 3.45&#xa0;eV, highlighting the crystal’s suitability for ultraviolet-visible light interactions. Thermally stimulated current (TSC) analysis uncovered a hole defect center, offering insights into charge trapping and transport mechanisms within the crystal. A prominent TSC peak was observed around 194&#xa0;K, corresponding to a trap activation energy of 0.32&#xa0;eV. Photoluminescence (PL) spectra displayed multiple emission peaks in the ultraviolet, blue, and green regions, emphasizing the crystal’s ability to emit across a broad spectrum. These findings reveals the band structure and defect dynamics of NaBi(WO<sub>4</sub>)<sub>2</sub>, establishing its promise for advanced optoelectronic applications, particularly in blue and green light-emitting devices.</p>

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Electronic and Optical Insights into NaBi(WO4)2: A Promising Candidate for Optoelectronic Applications

  • 期刊论文

  • 发表日期：

    2025年3月19日

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  • Mehmet Isik,
  • Gozde Altuntas,
  • Nizami M. Gasanly

摘要

This study provides an in-depth exploration of the electronic and optical properties of NaBi(WO4)2 crystal, with a focus on its potential applications in optoelectronic technologies. Absorbance measurements revealed a bandgap energy of 3.45 eV, highlighting the crystal’s suitability for ultraviolet-visible light interactions. Thermally stimulated current (TSC) analysis uncovered a hole defect center, offering insights into charge trapping and transport mechanisms within the crystal. A prominent TSC peak was observed around 194 K, corresponding to a trap activation energy of 0.32 eV. Photoluminescence (PL) spectra displayed multiple emission peaks in the ultraviolet, blue, and green regions, emphasizing the crystal’s ability to emit across a broad spectrum. These findings reveals the band structure and defect dynamics of NaBi(WO4)2, establishing its promise for advanced optoelectronic applications, particularly in blue and green light-emitting devices.