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<p>The ability to transfer and bond GaN membranes can enable new devices and new ways to optimize performance. Here, we demonstrate fabrication of GaN-Si pn diodes using van der Waals (vdW) lift-off and bonding of GaN membranes and assess the critical processing and interface challenges with this approach. Freestanding n-GaN layers were produced by epitaxial lift-off from sp<sup>2</sup>-bonded boron nitride-sapphire templates followed by direct bonding to p<sup>+</sup>-Si substrates. Fabricated diodes exhibited high on/off current ratios up to 8&#xa0;×&#xa0;10<sup>7</sup>, ideality factors of 1.8, and low series resistance. Annealing bonded heterojunctions at 400°C improved the ideality factor compared to as-bonded devices. Transmission electron microscope imaging revealed a well-bonded interface with only a 2-nm-thick oxide interlayer. Current-voltage analysis and device simulations indicated that the observed transport mechanism is due to recombination at defects in the GaN near the bonded interface. These results pave the way for a better understanding of bonded GaN junctions and how to improve their quality.</p>

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Bonded GaN-Si pn Heterojunctions Fabricated Using Transferred GaN Membranes

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年3月17日

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  • Eric W. Blanton,
  • Stefan Nikodemski,
  • Matt Grupen,
  • Nicholas R. Glavin,
  • Michael Snure

摘要

The ability to transfer and bond GaN membranes can enable new devices and new ways to optimize performance. Here, we demonstrate fabrication of GaN-Si pn diodes using van der Waals (vdW) lift-off and bonding of GaN membranes and assess the critical processing and interface challenges with this approach. Freestanding n-GaN layers were produced by epitaxial lift-off from sp2-bonded boron nitride-sapphire templates followed by direct bonding to p+-Si substrates. Fabricated diodes exhibited high on/off current ratios up to 8 × 107, ideality factors of 1.8, and low series resistance. Annealing bonded heterojunctions at 400°C improved the ideality factor compared to as-bonded devices. Transmission electron microscope imaging revealed a well-bonded interface with only a 2-nm-thick oxide interlayer. Current-voltage analysis and device simulations indicated that the observed transport mechanism is due to recombination at defects in the GaN near the bonded interface. These results pave the way for a better understanding of bonded GaN junctions and how to improve their quality.