Scholarlink

<p>W-Cu paste can be sintered with high-temperature co-fired ceramic substrates (HTCCs) to create W-Cu thick-film circuits, offering excellent conductivity for HTCCs. However, copper (Cu) loss often occurs during the sintering of W-Cu paste with HTCCs. To address this issue, this study utilized W-CuO powders as the raw material for preparing the paste, leveraging the high melting point and self-decomposition properties of CuO to produce W-Cu thick films with a reduced Cu loss ratio. To demonstrate the superior conductivity of the thick films prepared by W-CuO paste, the W-Cu paste and pure W paste were fabricated simultaneously. The results showed that the sintered W-CuO paste sample exhibited a square resistance of 15.6 mΩ/sq, which is significantly lower than that of W-Cu paste (24.3 mΩ/sq) and pure W paste (65.7&#xa0;mΩ/sq). Additionally, scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) analyses revealed that the W-Cu film fabricated from W-CuO raw materials displayed a more uniform Cu distribution and higher Cu content. The more uniform Cu distribution and higher Cu content originated from the melt and flow of Cu were significantly delayed by the self-decomposition properties of CuO. This study offers a new approach for the preparation of high-performance W-Cu thick-film circuits on HTCCs.</p> Graphical Abstract <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

A novel W-Cu Thick Film Fabricated on High-Temperature Co-fired Ceramic Substrates Using W-CuO Raw Powder Materials

  • 期刊论文

  • 发表日期：

    2025年2月22日

查看全文
  • Diyuan Zhu,
  • Wangzhi Xu,
  • Xiangquan Meng,
  • Hao Fu,
  • Mengmeng Ding,
  • Jian Sun,
  • Xue Yang,
  • Laima Luo

摘要

W-Cu paste can be sintered with high-temperature co-fired ceramic substrates (HTCCs) to create W-Cu thick-film circuits, offering excellent conductivity for HTCCs. However, copper (Cu) loss often occurs during the sintering of W-Cu paste with HTCCs. To address this issue, this study utilized W-CuO powders as the raw material for preparing the paste, leveraging the high melting point and self-decomposition properties of CuO to produce W-Cu thick films with a reduced Cu loss ratio. To demonstrate the superior conductivity of the thick films prepared by W-CuO paste, the W-Cu paste and pure W paste were fabricated simultaneously. The results showed that the sintered W-CuO paste sample exhibited a square resistance of 15.6 mΩ/sq, which is significantly lower than that of W-Cu paste (24.3 mΩ/sq) and pure W paste (65.7 mΩ/sq). Additionally, scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) analyses revealed that the W-Cu film fabricated from W-CuO raw materials displayed a more uniform Cu distribution and higher Cu content. The more uniform Cu distribution and higher Cu content originated from the melt and flow of Cu were significantly delayed by the self-decomposition properties of CuO. This study offers a new approach for the preparation of high-performance W-Cu thick-film circuits on HTCCs.

Graphical Abstract