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<p>Herein, a hybrid device structure is designed for high-frequency applications. The device is fabricated by the thermal evaporation of n-Bi<sub>2</sub>O<sub>3</sub> nanosheets onto n-Si substrates to form an isotype heterojunction encapsulated between two Schottky barriers (Ag/n-Si, Pt/n-Bi<sub>2</sub>O<sub>3</sub>). The hybrid-structured device exhibits metal–oxide–semiconductor (MOS) characteristics that can be depleted in the frequency domain of 1–70&#xa0;MHz. The complex device structure exhibits two identical flat-band built-in potentials with a value of 0.97&#xa0;eV. MOS devices display a charging/discharging cycle within a time scale of 14.3&#xa0;ns. In addition, when experimentally tested as band-pass/reject filters in the quad-band range of 0.01–1.80&#xa0;GHz, the device shows a high cutoff frequency up to ~19&#xa0;GHz at a quad frequency of 1.80&#xa0;GHz. Moreover, when employed as a multiport 5G/6G antenna using a network analyzer working in the frequency domain of 1.0–6.0&#xa0;GHz, the devices show promising antenna characteristics suitable for the targeted technology applications. Specifically, the measured reflection and transmission coefficient parameters for the two-port antenna designs show isolation parameters down to −24.5&#xa0;dB. The features of the two-port antennas, which demonstrate good isolation between transmitted signals, are promising for use of the Ag/n-Si/n-Bi<sub>2</sub>O<sub>3</sub>/Pt hybrid devices in high-frequency networks including 5G/6G technology.</p> Graphical Abstract <p></p>

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Isotype n-Si/n-Bi2O3 Heterojunctions Designed as High-Frequency MOS Devices, Microwave Band Filters and Quad Band 5G/6G Antennas

  • 期刊论文

  • 发表日期：

    2025年2月28日

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  • Isam Alawneh,
  • A. F. Qasrawi,
  • Tareq Zanoon,
  • Hazem K. Khanfar

摘要

Herein, a hybrid device structure is designed for high-frequency applications. The device is fabricated by the thermal evaporation of n-Bi2O3 nanosheets onto n-Si substrates to form an isotype heterojunction encapsulated between two Schottky barriers (Ag/n-Si, Pt/n-Bi2O3). The hybrid-structured device exhibits metal–oxide–semiconductor (MOS) characteristics that can be depleted in the frequency domain of 1–70 MHz. The complex device structure exhibits two identical flat-band built-in potentials with a value of 0.97 eV. MOS devices display a charging/discharging cycle within a time scale of 14.3 ns. In addition, when experimentally tested as band-pass/reject filters in the quad-band range of 0.01–1.80 GHz, the device shows a high cutoff frequency up to ~19 GHz at a quad frequency of 1.80 GHz. Moreover, when employed as a multiport 5G/6G antenna using a network analyzer working in the frequency domain of 1.0–6.0 GHz, the devices show promising antenna characteristics suitable for the targeted technology applications. Specifically, the measured reflection and transmission coefficient parameters for the two-port antenna designs show isolation parameters down to −24.5 dB. The features of the two-port antennas, which demonstrate good isolation between transmitted signals, are promising for use of the Ag/n-Si/n-Bi2O3/Pt hybrid devices in high-frequency networks including 5G/6G technology.

Graphical Abstract