<p>In this study, Zn<sub>0.15</sub>Nb<sub>0.3</sub>Ti<sub>0.55</sub>O<sub>2</sub>(ZNT)/polyolefin substrates filled with SiO<sub>2</sub> ((83 − <i>x</i>) ZNT/<i>x</i>SiO<sub>2</sub>/polyolefin, <i>x</i> = 5&#xa0;wt.%, 10&#xa0;wt.%, 15&#xa0;wt.%, 20&#xa0;wt.% and 25&#xa0;wt.%) have been fabricated to realize a near-zero temperature coefficient of dielectric constant (<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11813_Article_IEq1.gif" Format="GIF" Height="12" Rendition="HTML" Resolution="72" Type="Linedraw" Width="16" /> </InlineMediaObject> <EquationSource Format="TEX">\(\tau_{\varepsilon }\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>τ</mi> <mi>ε</mi> </msub> </math></EquationSource> </InlineEquation>). Specifically, modified fillers and polyolefin composite substrates were obtained by the doctor-blade method and hot-pressing. The successful modification of ceramics by the coupling agent A171 was confirmed through Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), and contact angle tests. The microstructure, dielectric properties, and thermal performance of the composite substrates were also analyzed. The findings indicate that the thermal properties of the composite substrates remain unaffected by the substitution of ZNT with SiO<sub>2</sub> fillers. The agglomeration of ceramic filler particles in the matrix leads to localized regions with significantly higher polarization intensity compared to the uniformly dispersed state. This abnormal local polarization weakens the overall polarization effect, thereby resulting in a decrease in the dielectric constant. Due to the positive <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11813_Article_IEq2.gif" Format="GIF" Height="12" Rendition="HTML" Resolution="72" Type="Linedraw" Width="16" /> </InlineMediaObject> <EquationSource Format="TEX">\(\tau_{\varepsilon }\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>τ</mi> <mi>ε</mi> </msub> </math></EquationSource> </InlineEquation> of SiO<sub>2</sub>, the original system has a negative <InlineEquation ID="IEq3"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11813_Article_IEq3.gif" Format="GIF" Height="12" Rendition="HTML" Resolution="72" Type="Linedraw" Width="16" /> </InlineMediaObject> <EquationSource Format="TEX">\(\tau_{\varepsilon }\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>τ</mi> <mi>ε</mi> </msub> </math></EquationSource> </InlineEquation>, resulting in a composite substrate with a near-zero <InlineEquation ID="IEq4"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11813_Article_IEq4.gif" Format="GIF" Height="12" Rendition="HTML" Resolution="72" Type="Linedraw" Width="16" /> </InlineMediaObject> <EquationSource Format="TEX">\(\tau_{\varepsilon }\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>τ</mi> <mi>ε</mi> </msub> </math></EquationSource> </InlineEquation> according to the principles of the mixing rule. As a result, when <i>x</i> = 25&#xa0;wt.%, the composite substrates realized medium dielectric constant (<InlineEquation ID="IEq5"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11813_Article_IEq5.gif" Format="GIF" Height="12" Rendition="HTML" Resolution="72" Type="Linedraw" Width="16" /> </InlineMediaObject> <EquationSource Format="TEX">\(\varepsilon_{r}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>ε</mi> <mi>r</mi> </msub> </math></EquationSource> </InlineEquation> = 6.29), low dielectric loss (<InlineEquation ID="IEq6"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11813_Article_IEq6.gif" Format="GIF" Height="14" Rendition="HTML" Resolution="72" Type="Linedraw" Width="36" /> </InlineMediaObject> <EquationSource Format="TEX">\({\text{tan}}\delta\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mtext>tan</mtext> <mi>δ</mi> </mrow> </math></EquationSource> </InlineEquation> = 0.0016), and near-zero <InlineEquation ID="IEq7"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11813_Article_IEq7.gif" Format="GIF" Height="12" Rendition="HTML" Resolution="72" Type="Linedraw" Width="16" /> </InlineMediaObject> <EquationSource Format="TEX">\(\tau_{\varepsilon }\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>τ</mi> <mi>ε</mi> </msub> </math></EquationSource> </InlineEquation> (+1.14&#xa0;ppm/°C). These findings indicate the potential of these composites in advanced electronic applications.</p>

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Achieving Near-Zero Temperature Coefficient of Dielectric Constant of Zn0.15Nb0.3Ti0.55O2/Polyolefin Composites via SiO2 Incorporation

  • Sisi Gu,
  • Zhu Qing,
  • Zhengyi Yang,
  • Enzhu Li,
  • Bin Tang,
  • Ying Yuan

摘要

In this study, Zn0.15Nb0.3Ti0.55O2(ZNT)/polyolefin substrates filled with SiO2 ((83 − x) ZNT/xSiO2/polyolefin, x = 5 wt.%, 10 wt.%, 15 wt.%, 20 wt.% and 25 wt.%) have been fabricated to realize a near-zero temperature coefficient of dielectric constant ( \(\tau_{\varepsilon }\) τ ε ). Specifically, modified fillers and polyolefin composite substrates were obtained by the doctor-blade method and hot-pressing. The successful modification of ceramics by the coupling agent A171 was confirmed through Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), and contact angle tests. The microstructure, dielectric properties, and thermal performance of the composite substrates were also analyzed. The findings indicate that the thermal properties of the composite substrates remain unaffected by the substitution of ZNT with SiO2 fillers. The agglomeration of ceramic filler particles in the matrix leads to localized regions with significantly higher polarization intensity compared to the uniformly dispersed state. This abnormal local polarization weakens the overall polarization effect, thereby resulting in a decrease in the dielectric constant. Due to the positive \(\tau_{\varepsilon }\) τ ε of SiO2, the original system has a negative \(\tau_{\varepsilon }\) τ ε , resulting in a composite substrate with a near-zero \(\tau_{\varepsilon }\) τ ε according to the principles of the mixing rule. As a result, when x = 25 wt.%, the composite substrates realized medium dielectric constant ( \(\varepsilon_{r}\) ε r  = 6.29), low dielectric loss ( \({\text{tan}}\delta\) tan δ  = 0.0016), and near-zero \(\tau_{\varepsilon }\) τ ε (+1.14 ppm/°C). These findings indicate the potential of these composites in advanced electronic applications.