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<p>Bilayer gate dielectrics were prepared by deposition of ZrO<sub>2</sub> and Ho<sub>2</sub>O<sub>3</sub> film on a 4H-SiC substrate followed by sputtering and subsequent oxidation and nitridation using O<sub>2</sub> and N<sub>2</sub>O gas concentrations. The performance of the bilayer gate dielectrics was evaluated based on electrical (<i>J</i>/<i>E</i> and C–V) and structural characterizations (x-ray diffraction [XRD], x-ray photoelectron spectroscopy [XPS], high-resolution transmission electron microscopy [HRTEM]). The formation of Zr–O, Ho–O, Zr–O–Si, and Ho–O–Si bonds was detected by structural characterization. HRTEM showed that the physical oxide thickness of the bilayer thin film was in the range of 4.64–7.04 nm. A ratio of 70% O<sub>2</sub> and 30% N<sub>2</sub>O was found to be the optimal sample concentration, with the highest hard electrical breakdown field at 11.05 MV cm<sup>−1</sup> and the lowest leakage current density at 10<sup>−6</sup> A cm<sup>−2</sup> at 4.61 MV cm<sup>−1</sup>. The physical oxide thickness was measured using HRTEM, revealing an intermixed bilayer formation during oxidation. The increased presence of nitrogen atoms positively impacted charge movement, enhancing electrical performance. The effective dielectric constant (<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11804_Article_IEq1.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="23" /> </InlineMediaObject> <EquationSource Format="TEX">\({k}_{\text{eff}}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>k</mi> <mtext>eff</mtext> </msub> </math></EquationSource> </InlineEquation>) of 12.95–26.35 and effective oxide charge (<InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11804_Article_IEq2.gif" Format="GIF" Height="17" Rendition="HTML" Resolution="72" Type="Linedraw" Width="28" /> </InlineMediaObject> <EquationSource Format="TEX">\({Q}_{\text{eff}}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>Q</mi> <mtext>eff</mtext> </msub> </math></EquationSource> </InlineEquation>) and slow trap density (STD), both in the range of 10<sup>12</sup> cm<sup>−2</sup>, support the conclusion that the bilayer thin film oxidized at a concentration ratio of 70:30 O<sub>2</sub>/N<sub>2</sub>O produced the optimal electrical performance and thus may serve as a high-<i>k</i> gate dielectric application in metal–oxide–semiconductor (MOS)-based devices.</p>

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Development of ZrO2 and Ho2O3 as Gate Dielectrics on 4H-SiC Substrate with N2O and O2 Gas Concentration Variations

  • 期刊论文

  • 发表日期：

    2025年2月19日

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  • Ahmad Hafiz Jafarul Tarek,
  • Tahsin Ahmed Mozaffor Onik,
  • Chin Wei Lai,
  • Bushroa Abd Razak,
  • Prastika Krisma Jiwanti,
  • Waqar Azeem,
  • Yingxin Goh,
  • Muhammad Khairi Faiz,
  • Yew Hoong Wong

摘要

Bilayer gate dielectrics were prepared by deposition of ZrO2 and Ho2O3 film on a 4H-SiC substrate followed by sputtering and subsequent oxidation and nitridation using O2 and N2O gas concentrations. The performance of the bilayer gate dielectrics was evaluated based on electrical (J/E and C–V) and structural characterizations (x-ray diffraction [XRD], x-ray photoelectron spectroscopy [XPS], high-resolution transmission electron microscopy [HRTEM]). The formation of Zr–O, Ho–O, Zr–O–Si, and Ho–O–Si bonds was detected by structural characterization. HRTEM showed that the physical oxide thickness of the bilayer thin film was in the range of 4.64–7.04 nm. A ratio of 70% O2 and 30% N2O was found to be the optimal sample concentration, with the highest hard electrical breakdown field at 11.05 MV cm−1 and the lowest leakage current density at 10−6 A cm−2 at 4.61 MV cm−1. The physical oxide thickness was measured using HRTEM, revealing an intermixed bilayer formation during oxidation. The increased presence of nitrogen atoms positively impacted charge movement, enhancing electrical performance. The effective dielectric constant ( \({k}_{\text{eff}}\) k eff ) of 12.95–26.35 and effective oxide charge ( \({Q}_{\text{eff}}\) Q eff ) and slow trap density (STD), both in the range of 1012 cm−2, support the conclusion that the bilayer thin film oxidized at a concentration ratio of 70:30 O2/N2O produced the optimal electrical performance and thus may serve as a high-k gate dielectric application in metal–oxide–semiconductor (MOS)-based devices.