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<p>Analysis of a distinct threading edge dislocation (TED) low-angle grain boundary (LAGB) network is carried out on physical vapor transport (PVT)-grown off-axis 4H-SiC wafers through synchrotron x-ray topography in conjunction with ray-tracing simulation. The frequently observed white contrast main TED LAGB network distributed approximately along the <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11793_Article_IEq1.gif" Format="GIF" Height="20" Rendition="HTML" Resolution="72" Type="Linedraw" Width="42" /> </InlineMediaObject> <EquationSource Format="TEX">\([11\overline{2 }0]\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mo stretchy="false">[</mo> <mn>11</mn> <mover> <mn>2</mn> <mo>¯</mo> </mover> <mn>0</mn> <mo stretchy="false">]</mo> </mrow> </math></EquationSource> </InlineEquation> offcut direction away from the facet, as well as dark contrast satellite TED LAGB networks on either side of the main TED network, is explained with a horseshoe-shaped growth step model induced by radial temperature gradient-related diffusivity variation with screw-oriented prismatic slip dislocations as the dislocation source. The significant effective tilt aroused by the TED LAGB network is quantitatively determined through a mathematical model.</p>

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Analysis of Threading Edge Dislocation Low-Angle Grain Boundary Network Distributions in 4H-SiC Wafers Through Synchrotron X-ray Topography and Ray-Tracing Simulation

  • 期刊论文

  • 发表日期：

    2025年2月12日

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  • Qianyu Cheng,
  • Zeyu Chen,
  • Shanshan Hu,
  • Balaji Raghothamachar,
  • Michael Dudley

摘要

Analysis of a distinct threading edge dislocation (TED) low-angle grain boundary (LAGB) network is carried out on physical vapor transport (PVT)-grown off-axis 4H-SiC wafers through synchrotron x-ray topography in conjunction with ray-tracing simulation. The frequently observed white contrast main TED LAGB network distributed approximately along the \([11\overline{2 }0]\) [ 11 2 ¯ 0 ] offcut direction away from the facet, as well as dark contrast satellite TED LAGB networks on either side of the main TED network, is explained with a horseshoe-shaped growth step model induced by radial temperature gradient-related diffusivity variation with screw-oriented prismatic slip dislocations as the dislocation source. The significant effective tilt aroused by the TED LAGB network is quantitatively determined through a mathematical model.