<p>Graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) was synthesized by thermal condensation of melamine at 550°C for three different durations (2&#xa0;h, 4&#xa0;h, and 6&#xa0;h). Increased calcination time resulted in a reduction in flake size, with improved crystallinity. We also observed a reduction in the bandgap of g-C<sub>3</sub>N<sub>4</sub> with increased calcination time. Layered g-C<sub>3</sub>N<sub>4</sub> was synthesized from bulk g-C<sub>3</sub>N<sub>4</sub> via ultrasonication. The dispersed layered g-C<sub>3</sub>N<sub>4</sub> was used for the fabrication of a g-C<sub>3</sub>N<sub>4</sub>/Si heterostructured photodetector, which showed responsivity of ~32 A/W, detectivity of ~14 × 10<sup>13</sup> Jones, and external quantum efficiency (EQE) of 80 × 10<sup>2</sup>% at low power density of 0.06 mW/cm<sup>2</sup> and 405&#xa0;nm excitation source.</p>

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Melamine-Based Graphitic C3N4/p-Silicon Heterostructure Photodetector: Effect of g-C3N4 Growth Time on Performance

  • Rakesh K. Prasad,
  • Dilip K. Singh

摘要

Graphitic carbon nitride (g-C3N4) was synthesized by thermal condensation of melamine at 550°C for three different durations (2 h, 4 h, and 6 h). Increased calcination time resulted in a reduction in flake size, with improved crystallinity. We also observed a reduction in the bandgap of g-C3N4 with increased calcination time. Layered g-C3N4 was synthesized from bulk g-C3N4 via ultrasonication. The dispersed layered g-C3N4 was used for the fabrication of a g-C3N4/Si heterostructured photodetector, which showed responsivity of ~32 A/W, detectivity of ~14 × 1013 Jones, and external quantum efficiency (EQE) of 80 × 102% at low power density of 0.06 mW/cm2 and 405 nm excitation source.