Scholarlink

<p>Hg<sub>1-<i>x</i></sub>Cd<sub><i>x</i></sub>Te (MCT) is recognized as an ideal material for infrared detector applications due to its superior internal quantum efficiency. However, a minor process deviation can deteriorate the crystal quality because of the extremely harsh epitaxial processes of MCT, leading to a dramatic increase of defect type and density. Here, MCT thin films were grown on lattice-matched CdZnTe substrates by regulating deliberately molecular beam epitaxy (MBE) processes. Two types of etch pit defects with triangular (EP-A) and foliate (EP-B) morphologies have been characterized by scanning electron microscope and transmission electron microscopy. The atomic structural information and origin of the two etch pit microdefects were investigated in detail. The processes of EP-A defects correlated to low growth temperature and Hg pressure, contrary to those of EP-B ones. On the basis of MBE process optimization, extremely high-quality MCT thin films with a low defect density of an average etch pit density less than 3&#xa0;×&#xa0;10<sup>4</sup>&#xa0;cm<sup>−2</sup> and full width at half-maximum of only 14.4 arcsec measured by double crystal rocking curve were yielded. The formation mechanisms and mitigation strategies of the defects are detailed, providing a vital guidance for higher-quality MCT infrared detector applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Identification and Mitigation Strategies of Etch Pit-Associated Defects in MBE-Grown HgCdTe Thin Films

  • 期刊论文

  • 发表日期：

    2025年1月28日

查看全文
  • Hechun Cao,
  • Dongyang Zhao,
  • Tao Hu,
  • Yunzhe Zheng,
  • Wei Bai,
  • Yan Chen,
  • Jing Yang,
  • Yuanyuan Zhang,
  • Yan Cheng,
  • Rong Huang,
  • Xiaodong Tang,
  • Jianlu Wang,
  • Junhao Chu

摘要

Hg1-xCdxTe (MCT) is recognized as an ideal material for infrared detector applications due to its superior internal quantum efficiency. However, a minor process deviation can deteriorate the crystal quality because of the extremely harsh epitaxial processes of MCT, leading to a dramatic increase of defect type and density. Here, MCT thin films were grown on lattice-matched CdZnTe substrates by regulating deliberately molecular beam epitaxy (MBE) processes. Two types of etch pit defects with triangular (EP-A) and foliate (EP-B) morphologies have been characterized by scanning electron microscope and transmission electron microscopy. The atomic structural information and origin of the two etch pit microdefects were investigated in detail. The processes of EP-A defects correlated to low growth temperature and Hg pressure, contrary to those of EP-B ones. On the basis of MBE process optimization, extremely high-quality MCT thin films with a low defect density of an average etch pit density less than 3 × 104 cm−2 and full width at half-maximum of only 14.4 arcsec measured by double crystal rocking curve were yielded. The formation mechanisms and mitigation strategies of the defects are detailed, providing a vital guidance for higher-quality MCT infrared detector applications.