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<p>The development of transparent electronic systems requires the simultaneous advancement of <i>p</i>-type and <i>n</i>-type thin-film transistors (TFTs). However, <i>p</i>-type TFTs have not progressed to the same degree as <i>n</i>-type TFTs. Therefore, the investigation of new methods to enhance <i>p</i>-type TFT performance is critical. This paper aims to find an optimized fabrication technique for NiO<sub><i>x</i></sub> thin film production as the active layer of a <i>p</i>-type TFT. NiO<sub><i>x</i></sub> thin films were deposited using sol–gel and thermal oxidation methods, and their structural, morphological, and electrical characteristics were compared. While the two samples exhibited similar characteristics, the sol–gel method offered significant advantages, including lower operation temperature, better controllability, and a simpler doping process. An optimized thermal annealing process was carried out followed the sol–gel method, improving device performance significantly. The best improvement was observed at 300°C, with carrier mobility (<i>μ</i>) increasing by 17%, subthreshold swing (SS) by 78%, and the <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> ratio by 140%. The influence of cadmium (Cd) doping on the quality and performance of the NiO<sub><i>x</i></sub> thin film was also studied, showing an improvement in <i>μ</i> of 94% and <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> of 36% compared to the optimized TFT. Structural and morphological characterization tools including x-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM) were employed to examine the quality of the developed layers, while electrical characterization was conducted to evaluate key performance parameters of <i>μ</i>, SS, and <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> ratio. The experimental details, characterization methods, and improvement mechanisms are discussed in detail.</p>

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High-Performance Solution-Processed Transparent Cd-Doped p-Type NiOx Thin-Film Transistor

  • 期刊论文

  • 发表日期：

    2025年2月2日

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  • Kiana Khodakarami,
  • Arash Fereydoni,
  • Ali Mosahebfard,
  • Sajjad Dehghani

摘要

The development of transparent electronic systems requires the simultaneous advancement of p-type and n-type thin-film transistors (TFTs). However, p-type TFTs have not progressed to the same degree as n-type TFTs. Therefore, the investigation of new methods to enhance p-type TFT performance is critical. This paper aims to find an optimized fabrication technique for NiOx thin film production as the active layer of a p-type TFT. NiOx thin films were deposited using sol–gel and thermal oxidation methods, and their structural, morphological, and electrical characteristics were compared. While the two samples exhibited similar characteristics, the sol–gel method offered significant advantages, including lower operation temperature, better controllability, and a simpler doping process. An optimized thermal annealing process was carried out followed the sol–gel method, improving device performance significantly. The best improvement was observed at 300°C, with carrier mobility (μ) increasing by 17%, subthreshold swing (SS) by 78%, and the ION/IOFF ratio by 140%. The influence of cadmium (Cd) doping on the quality and performance of the NiOx thin film was also studied, showing an improvement in μ of 94% and ION/IOFF of 36% compared to the optimized TFT. Structural and morphological characterization tools including x-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM) were employed to examine the quality of the developed layers, while electrical characterization was conducted to evaluate key performance parameters of μ, SS, and ION/IOFF ratio. The experimental details, characterization methods, and improvement mechanisms are discussed in detail.