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<p>C54-TiSi<sub>2</sub> is a promising semiconductor material for integrated circuits due to its excellent electrical properties. However, during the preparation of C54-TiSi<sub>2</sub> through electromagnetic directional solidification, the presence of silicon (Si) inclusions can increase resistivity and adversely affect performance. This study investigated the use of sodium hydroxide (NaOH) as a leaching agent to remove Si inclusions from C54-TiSi<sub>2</sub> crystals. Thermodynamic analysis and alkali-leaching experiments were conducted, which focused on the morphological characteristics and distribution patterns of Si within C54-TiSi<sub>2</sub>. The results indicated that the Si impurity content increased with increasing ingot thickness, and the morphology of Si was determined by the pores formed between C54-TiSi<sub>2</sub> crystals. Furthermore, NaOH alkaline leaching effectively desilicated the Si without compromising the lattice structure of C54-TiSi<sub>2</sub> crystals. Subsequently, with optimal leaching parameters of 15 pct NaOH concentration, a temperature of 70&#xa0;°C, a leaching time of 20 minutes, and a liquid-to-solid ratio (L/S) of 4:1, the purity of C54-TiSi<sub>2</sub> crystals exceeded 99.5 pct, thereby achieving a Si removal rate of 99 pct. After the alkali-leaching and purification process, the resistivity of C54-TiSi<sub>2</sub> decreased from 8.35&#xa0;×&#xa0;10<sup>−5</sup> to 4.75&#xa0;×&#xa0;10<sup>−5</sup> Ω cm, which was significantly lower compared with the resistivity of commercially available C54-TiSi<sub>2</sub>, thereby enhancing its electrical properties. This study offered theoretical insight and data support for the purification and performance assessment of C54-TiSi<sub>2</sub> crystals.</p>

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Experimental Study on Purification of C54-TiSi2 from Alloy Through Alkaline-Leaching Desilication

  • 期刊论文

  • 发表日期：

    2025年1月24日

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  • Kuisong Zhu,
  • Li Cao,
  • Tingting Yan,
  • Fuhong Zeng,
  • Yingtao Zhao,
  • Tiantian Liu,
  • Kuixian Wei,
  • Jun Wang

摘要

C54-TiSi2 is a promising semiconductor material for integrated circuits due to its excellent electrical properties. However, during the preparation of C54-TiSi2 through electromagnetic directional solidification, the presence of silicon (Si) inclusions can increase resistivity and adversely affect performance. This study investigated the use of sodium hydroxide (NaOH) as a leaching agent to remove Si inclusions from C54-TiSi2 crystals. Thermodynamic analysis and alkali-leaching experiments were conducted, which focused on the morphological characteristics and distribution patterns of Si within C54-TiSi2. The results indicated that the Si impurity content increased with increasing ingot thickness, and the morphology of Si was determined by the pores formed between C54-TiSi2 crystals. Furthermore, NaOH alkaline leaching effectively desilicated the Si without compromising the lattice structure of C54-TiSi2 crystals. Subsequently, with optimal leaching parameters of 15 pct NaOH concentration, a temperature of 70 °C, a leaching time of 20 minutes, and a liquid-to-solid ratio (L/S) of 4:1, the purity of C54-TiSi2 crystals exceeded 99.5 pct, thereby achieving a Si removal rate of 99 pct. After the alkali-leaching and purification process, the resistivity of C54-TiSi2 decreased from 8.35 × 10−5 to 4.75 × 10−5 Ω cm, which was significantly lower compared with the resistivity of commercially available C54-TiSi2, thereby enhancing its electrical properties. This study offered theoretical insight and data support for the purification and performance assessment of C54-TiSi2 crystals.